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11th "Trento" Workshop on Advanced Silicon Radiation Detectors

22–24 Feb 2016
LPNHE
Europe/Zurich timezone

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Session

HVCMOS 2

23 Feb 2016, 14:00
Amphitheatre de recherche George Charpak (LPNHE)

Amphitheatre de recherche George Charpak

LPNHE

4 Place Jussieu 75005 - Paris FRANCE

Conveners

HVCMOS 2

  • Cinzia Da Via (University of Manchester (GB))

Presentation materials

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  1. 158. TCT measurements of HV-CMOS test structures irradiated with neutrons
    Igor Mandic (Jozef Stefan Institute (SI))
    23/02/2016, 14:00
  2. 159. Investigation on the radiation resistance of HV-CMOS and pin diodes using a Transient Current Technique based on the Two-Photon-Absortion Process
    Ivan Vila Alvarez (Universidad de Cantabria (ES))
    23/02/2016, 14:20
    Transient Current Techniques (TCT) based on laser-induced photo-currents produced by Single Photon Absorption (SPA) processes have been extensively used during the last two decades as a powerful tool to study many of the properties relevant to operation of semiconductor detectors. Very recently, an innovative Transient Current Technique was introduced where the free charge carriers are...
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  3. 160. SPS Test Beam characterisation results with CCPDv4 capacitively coupled to FEI4
    Francesco Armando Di Bello (Universite de Geneve (CH))
    23/02/2016, 14:40
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