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11th "Trento" Workshop on Advanced Silicon Radiation Detectors

22-24 February 2016
LPNHE
Europe/Zurich timezone

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Contribution List

44 / 44
143. Welcome
Giovanni Calderini (Centre National de la Recherche Scientifique (FR))
22/02/2016, 14:00
189. Practical information
Giovanni Marchiori (LPNHE Paris), Marco Bomben (Centre National de la Recherche Scientifique (FR))
22/02/2016, 14:05
144. Progress in Ultra-Fast Silicon Detectors
Hartmut Sadrozinski (SCIPP, UC santa Cruz), Hartmut Sadrozinski (University of California,Santa Cruz (US))
22/02/2016, 14:20
145. Tracking in 4 dimensions
Nicolo Cartiglia (INFN), Nicolo Cartiglia (Universita e INFN Torino (IT))
22/02/2016, 14:40
146. Electric field, mobility and trapping in Si detectors irradiated with neutrons and protons up to 1e17 n_eq/cm^2
Marko Mikuz (Jozef Stefan Institute (SI))
22/02/2016, 15:00
182. 3D Sensors for the HL-LHC
Sebastian Grinstein (IFAE - Barcelona (ES))
22/02/2016, 15:20
147. Recent results with hybrid pixel assemblies for the CLIC vertex detector
Andreas Matthias Nurnberg (Inst. fuer Experimentelle Kernphys.-Universitaet Karlsruhe-Karl), Andreas Matthias Nurnberg (CERN)
22/02/2016, 16:15
148. Silicon pixel tracking detector with ultra-precise time resolution
Massimiliano Fiorini (Universita di Ferrara & INFN (IT))
22/02/2016, 16:35
149. X-rays characterisation of pixelated silicon detectors
Dima Maneuski (University of Glasgow), Dr Dima Maneuski (University of Glasgow (GB))
22/02/2016, 16:55
150. The Belle II SVD Origami Modules
Antonio Paladino (INFN - National Institute for Nuclear Physics)
22/02/2016, 17:15
186. Beam test results of highly irradiated planar and 3D pixel sensors for the Phase II Upgrade of the CMS pixel detector
Daniel Schell (KIT - Karlsruhe Institute of Technology (DE))
22/02/2016, 17:35
151. Charge Collection Properties of depleted Monolithic Active Pixel Sensors
Malte Backhaus (CERN)
23/02/2016, 09:00
152. Development of passive pixel sensors using a commercial 150nm CMOS technology on high resistivity silicon
Fabian Huegging (Universitaet Bonn (DE)), Fabian Huegging (University of Bonn)
23/02/2016, 09:20
153. Monolithic CMOS ASIC Developments
Pietro Caragiulo (SLAC)
23/02/2016, 09:40
187. The first reticle size HV-CMOS sensor demonstrator for ATLAS pixel layers
Ivan Peric (KIT - Karlsruhe Institute of Technology (DE))
23/02/2016, 10:00
154. The impact and persistence of static surface charges on differently passivated silicon strip sensors
Dr Axel Koenig
23/02/2016, 11:00
155. New pixel technologies for HL-LHC
Andrea Gaudiello (Universita e INFN Genova (IT))
23/02/2016, 11:20
156. Detector development at the Paul-Scherrer-Institut (PSI)
Dominic Greiffenberg (PSI - Paul Scherrer Institute)
23/02/2016, 11:40
157. Reverse bias current characterisation of silicon strip sensors and shallow radiation damage generation
Sven Wonsak (University of Liverpool (GB))
23/02/2016, 12:00
158. TCT measurements of HV-CMOS test structures irradiated with neutrons
Igor Mandic (Jozef Stefan Institute (SI))
23/02/2016, 14:00
159. Investigation on the radiation resistance of HV-CMOS and pin diodes using a Transient Current Technique based on the Two-Photon-Absortion Process
Ivan Vila Alvarez (Universidad de Cantabria (ES))
23/02/2016, 14:20
Transient Current Techniques (TCT) based on laser-induced photo-currents produced by Single Photon Absorption (SPA) processes have been extensively used during the last two decades as a powerful tool to study many of the properties relevant to operation of semiconductor detectors. Very recently, an innovative Transient Current Technique was introduced where the free charge carriers are...
160. SPS Test Beam characterisation results with CCPDv4 capacitively coupled to FEI4
Francesco Armando Di Bello (Universite de Geneve (CH))
23/02/2016, 14:40
161. Pixel Sensor Development for the LHCb VELO Upgrade
Asmund Schiager Folkestad (Norwegian University of Science and Technology (NO)), Åsmund Folkestad
23/02/2016, 16:15
162. The Phase 1 upgrade of the CMS pixel detector
Viktor Veszpremi (Wigner RCP, Budapest (HU))
23/02/2016, 16:35
163. Results on thin n in p Planar Pixels from INFN R&D
Marco Meschini (Universita e INFN, Firenze (IT))
23/02/2016, 16:55
164. Characterisation of thin irradiated epitaxial silicon sensors for the CMS phase II pixel upgrade
Matteo Centis Vignali (Hamburg University (DE))
23/02/2016, 17:15
184. The upgraded ATLAS Pixel detector and its performance during run-2 in 2015
Didier Ferrere (Universite de Geneve (CH))
23/02/2016, 17:35
165. Latest development in HPK/KEK n$^+$-in-p planar pixel sensors for very high radiation environments
Yoshinobu Unno (High Energy Accelerator Research Organization (JP))
24/02/2016, 09:00
166. Study of New ADVACAM Active Edge Sensor Technology for ATLAS Upgrade
Tasneem Rashid (Laboratoire de l'Accelerateur Lineaire (FR))
24/02/2016, 09:20
167. Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
Audrey Ducourthial (Centre National de la Recherche Scientifique (FR))
24/02/2016, 09:40
168. Initial results from the electrical characterisation of planar p-on-n sensors with active/slim-edge for the next generation of FELs
Gian Franco Dalla Betta (Universita degli Studi di Trento (IT)), Gian-Franco Dalla Betta (INFN and University of Trento)
24/02/2016, 10:00
172. Status of LGAD CNM fabrications
Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)), Giulio Pellegrini (Universidad de Valencia (ES))
24/02/2016, 11:00
169. Low Gain Avalanche Detectors TCAD Radiation Damage Analysis
Francisco Rogelio Palomo Pinto (Universidad de Cantabria (ES)), Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))
24/02/2016, 11:20
Where we present our last results on radiation damage analysis of Low Gain Avalanche Detectors using the Synopsys TCAD suite and different well established radiation damage models. Our main conclusions point to this device could work reasonably well up to ~1e14 n_eq/cm2.
170. First Inverted Low Gain Avalanche Detector fabrication at IMB-CNM
Maria del Mar Carulla Areste (Instituto de Microelectronica de Barcelona IMB-CNM)
24/02/2016, 11:40
171. Low Gain Avalanche Diode gallium process flow simulation studies
Evangelos - Gkougkousis (Conseil Europeen Recherche Nucl. (CERN)-Unknown-Unknown), Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))
24/02/2016, 12:00
173. Status of 3D detector activities at CNM
Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)), Giulio Pellegrini (Universidad de Valencia (ES))
24/02/2016, 14:00
3D
175. Beam test results of irradiated 3D pixel sensors for the CMS-TOTEM Precision Proton Spectrometer
Fabio Ravera (Universita e INFN Torino (IT))
24/02/2016, 14:20
3D
174. Initial results from a new generation of 3D Sensors for HL-LHC
Maurizio Boscardin (Unknown), Maurizio Boscardin (FBK Trento)
24/02/2016, 14:40
3D
188. Charaterization of 3D module with micro-channel cooling
Cinzia Da Via (University of Manchester (GB))
24/02/2016, 15:00
3D
177. TCAD simulations of High-Voltage-CMOS pixel structures for the CLIC vertex detector
Matthew Daniel Buckland (University of Liverpool (GB))
24/02/2016, 16:15
178. Validation strategy for the simulation of highly irradiated silicon pixel sensors
Joern Schwandt (Hamburg University (DE))
24/02/2016, 16:35
179. TCAD simulations of LGAD devices using Silvaco software
Marco Bomben (Centre National de la Recherche Scientifique (FR))
24/02/2016, 16:55
180. Comprehensive radiation damage test and modelling of p-type silicon detectors for high-luminosity operations
Arianna Morozzi (Universita e INFN, Perugia (IT))
24/02/2016, 17:15
181. Close-out
24/02/2016, 17:45
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