11th "Trento" Workshop on Advanced Silicon Radiation Detectors

Contribution List

143. Welcome

Giovanni Calderini (Centre National de la Recherche Scientifique (FR))

2/22/16, 2:00 PM

Introduction

189. Practical information

Giovanni Marchiori (LPNHE Paris), Marco Bomben (Centre National de la Recherche Scientifique (FR))

2/22/16, 2:05 PM

Introduction

144. Progress in Ultra-Fast Silicon Detectors

Hartmut Sadrozinski (SCIPP, UC santa Cruz), Hartmut Sadrozinski (University of California,Santa Cruz (US))

2/22/16, 2:20 PM

Introduction

145. Tracking in 4 dimensions

Nicolo Cartiglia (Universita e INFN Torino (IT))

2/22/16, 2:40 PM

Introduction

146. Electric field, mobility and trapping in Si detectors irradiated with neutrons and protons up to 1e17 n_eq/cm^2

Marko Mikuz (Jozef Stefan Institute (SI))

2/22/16, 3:00 PM

Introduction

182. 3D Sensors for the HL-LHC

Sebastian Grinstein (IFAE - Barcelona (ES))

2/22/16, 3:20 PM

Introduction

147. Recent results with hybrid pixel assemblies for the CLIC vertex detector

Andreas Matthias Nurnberg (CERN), Andreas Matthias Nurnberg (Inst. fuer Experimentelle Kernphys.-Universitaet Karlsruhe-Karl)

2/22/16, 4:15 PM

Planar 1

148. Silicon pixel tracking detector with ultra-precise time resolution

Massimiliano Fiorini (Universita di Ferrara & INFN (IT))

2/22/16, 4:35 PM

Planar 1

149. X-rays characterisation of pixelated silicon detectors

Dr Dima Maneuski (University of Glasgow (GB))

2/22/16, 4:55 PM

Planar 1

150. The Belle II SVD Origami Modules

Antonio Paladino (INFN - National Institute for Nuclear Physics)

2/22/16, 5:15 PM

Planar 1

186. Beam test results of highly irradiated planar and 3D pixel sensors for the Phase II Upgrade of the CMS pixel detector

Daniel Schell (KIT - Karlsruhe Institute of Technology (DE))

2/22/16, 5:35 PM

Planar 1

151. Charge Collection Properties of depleted Monolithic Active Pixel Sensors

Malte Backhaus (CERN)

2/23/16, 9:00 AM

HVCMOS 1

152. Development of passive pixel sensors using a commercial 150nm CMOS technology on high resistivity silicon

Fabian Huegging (Universitaet Bonn (DE)), Fabian Huegging (University of Bonn)

2/23/16, 9:20 AM

HVCMOS 1

153. Monolithic CMOS ASIC Developments

Pietro Caragiulo (SLAC)

2/23/16, 9:40 AM

HVCMOS 1

187. The first reticle size HV-CMOS sensor demonstrator for ATLAS pixel layers

Ivan Peric (KIT - Karlsruhe Institute of Technology (DE))

2/23/16, 10:00 AM

HVCMOS 1

154. The impact and persistence of static surface charges on differently passivated silicon strip sensors

Dr Axel Koenig

2/23/16, 11:00 AM

Technology

155. New pixel technologies for HL-LHC

Andrea Gaudiello (Universita e INFN Genova (IT))

2/23/16, 11:20 AM

Technology

156. Detector development at the Paul-Scherrer-Institut (PSI)

Dominic Greiffenberg (PSI - Paul Scherrer Institute)

2/23/16, 11:40 AM

Technology

157. Reverse bias current characterisation of silicon strip sensors and shallow radiation damage generation

Sven Wonsak (University of Liverpool (GB))

2/23/16, 12:00 PM

Technology

158. TCT measurements of HV-CMOS test structures irradiated with neutrons

Igor Mandic (Jozef Stefan Institute (SI))

2/23/16, 2:00 PM

HVCMOS 2

159. Investigation on the radiation resistance of HV-CMOS and pin diodes using a Transient Current Technique based on the Two-Photon-Absortion Process

Ivan Vila Alvarez (Universidad de Cantabria (ES))

2/23/16, 2:20 PM

HVCMOS 2

Transient Current Techniques (TCT) based on laser-induced photo-currents produced by Single Photon Absorption (SPA) processes have been extensively used during the last two decades as a powerful tool to study many of the properties relevant to operation of semiconductor detectors. Very recently, an innovative Transient Current Technique was introduced where the free charge carriers are...

160. SPS Test Beam characterisation results with CCPDv4 capacitively coupled to FEI4

Francesco Armando Di Bello (Universite de Geneve (CH))

2/23/16, 2:40 PM

HVCMOS 2

161. Pixel Sensor Development for the LHCb VELO Upgrade

Asmund Schiager Folkestad (Norwegian University of Science and Technology (NO)), Åsmund Folkestad

2/23/16, 4:15 PM

Planar 2

162. The Phase 1 upgrade of the CMS pixel detector

Viktor Veszpremi (Wigner RCP, Budapest (HU))

2/23/16, 4:35 PM

Planar 2

163. Results on thin n in p Planar Pixels from INFN R&D

Marco Meschini (Universita e INFN, Firenze (IT))

2/23/16, 4:55 PM

Planar 2

164. Characterisation of thin irradiated epitaxial silicon sensors for the CMS phase II pixel upgrade

Matteo Centis Vignali (Hamburg University (DE))

2/23/16, 5:15 PM

Planar 2

184. The upgraded ATLAS Pixel detector and its performance during run-2 in 2015

Didier Ferrere (Universite de Geneve (CH))

2/23/16, 5:35 PM

Planar 2

165. Latest development in HPK/KEK n$^+$-in-p planar pixel sensors for very high radiation environments

Yoshinobu Unno (High Energy Accelerator Research Organization (JP))

2/24/16, 9:00 AM

Planar 3

166. Study of New ADVACAM Active Edge Sensor Technology for ATLAS Upgrade

Tasneem Rashid (Laboratoire de l'Accelerateur Lineaire (FR))

2/24/16, 9:20 AM

Planar 3

167. Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

Audrey Ducourthial (Centre National de la Recherche Scientifique (FR))

2/24/16, 9:40 AM

Planar 3

168. Initial results from the electrical characterisation of planar p-on-n sensors with active/slim-edge for the next generation of FELs

Gian Franco Dalla Betta (Universita degli Studi di Trento (IT)), Gian-Franco Dalla Betta (INFN and University of Trento)

2/24/16, 10:00 AM

Planar 3

172. Status of LGAD CNM fabrications

Giulio Pellegrini (Universidad de Valencia (ES)), Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

2/24/16, 11:00 AM

LGAD

169. Low Gain Avalanche Detectors TCAD Radiation Damage Analysis

Francisco Rogelio Palomo Pinto (Universidad de Cantabria (ES)), Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))

2/24/16, 11:20 AM

LGAD

Where we present our last results on radiation damage analysis of Low Gain Avalanche Detectors using the Synopsys TCAD suite and different well established radiation damage models. Our main conclusions point to this device could work reasonably well up to ~1e14 n_eq/cm2.

170. First Inverted Low Gain Avalanche Detector fabrication at IMB-CNM

Maria del Mar Carulla Areste (Instituto de Microelectronica de Barcelona IMB-CNM)

2/24/16, 11:40 AM

LGAD

171. Low Gain Avalanche Diode gallium process flow simulation studies

Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))

2/24/16, 12:00 PM

LGAD

173. Status of 3D detector activities at CNM

Giulio Pellegrini (Universidad de Valencia (ES)), Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

2/24/16, 2:00 PM

3D

175. Beam test results of irradiated 3D pixel sensors for the CMS-TOTEM Precision Proton Spectrometer

Fabio Ravera (Universita e INFN Torino (IT))

2/24/16, 2:20 PM

3D

174. Initial results from a new generation of 3D Sensors for HL-LHC

Maurizio Boscardin (FBK Trento), Maurizio Boscardin (Unknown)

2/24/16, 2:40 PM

3D

188. Charaterization of 3D module with micro-channel cooling

Cinzia Da Via (University of Manchester (GB))

2/24/16, 3:00 PM

3D

177. TCAD simulations of High-Voltage-CMOS pixel structures for the CLIC vertex detector

Matthew Daniel Buckland (University of Liverpool (GB))

2/24/16, 4:15 PM

TCAD

178. Validation strategy for the simulation of highly irradiated silicon pixel sensors

Joern Schwandt (Hamburg University (DE))

2/24/16, 4:35 PM

TCAD

179. TCAD simulations of LGAD devices using Silvaco software

Marco Bomben (Centre National de la Recherche Scientifique (FR))

2/24/16, 4:55 PM

TCAD

180. Comprehensive radiation damage test and modelling of p-type silicon detectors for high-luminosity operations

Arianna Morozzi (Universita e INFN, Perugia (IT))

2/24/16, 5:15 PM

TCAD

181. Close-out

2/24/16, 5:45 PM

Conference closing