11th "Trento" Workshop on Advanced Silicon Radiation Detectors

Session

HVCMOS 2

23 Feb 2016, 14:00

Amphitheatre de recherche George Charpak (LPNHE)

Conveners

HVCMOS 2

• Cinzia Da Via (University of Manchester (GB))

158. TCT measurements of HV-CMOS test structures irradiated with neutrons

Igor Mandic (Jozef Stefan Institute (SI))

23/02/2016, 14:00

159. Investigation on the radiation resistance of HV-CMOS and pin diodes using a Transient Current Technique based on the Two-Photon-Absortion Process

Ivan Vila Alvarez (Universidad de Cantabria (ES))

23/02/2016, 14:20

Transient Current Techniques (TCT) based on laser-induced photo-currents produced by Single Photon Absorption (SPA) processes have been extensively used during the last two decades as a powerful tool to study many of the properties relevant to operation of semiconductor detectors. Very recently, an innovative Transient Current Technique was introduced where the free charge carriers are...

160. SPS Test Beam characterisation results with CCPDv4 capacitively coupled to FEI4

Francesco Armando Di Bello (Universite de Geneve (CH))

23/02/2016, 14:40