Speaker
Dr
Elena Verbitskaya
(Ioffe Institute, St. Petersburg)
Description
The LGAD characteristics are calculated basing on the model of carrier impact ionization in the p+ built-in layer. It is shown that characteristics of the diodes are controlled by negative feedback via trapping of holes arisen due to impact ionization, which reduces the electric field and the signal gain. The dependences of collected charge vs. bias voltage and fluence are obtained and their correlation with experimental data is shown.
Author
Dr
Elena Verbitskaya
(Ioffe Institute, St. Petersburg)
Co-authors
Artem Shepelev
(Ioffe Institute, St. Petersburg)
Darya Mitina
(Ioffe Institute, St. Petersburg)
Dr
Vladimir Eremin
(Ioffe Institute, St. Petersburg)