Dec 2 – 4, 2015
CERN
Europe/Zurich timezone

Simulation of LGAD characteristics taking into account negative feedback in detectors with carrier multiplication

Dec 3, 2015, 4:40 PM
20m
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

6-2-024
114
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Standard (20 min including discussion) Simulations

Speaker

Dr Elena Verbitskaya (Ioffe Institute, St. Petersburg)

Description

The LGAD characteristics are calculated basing on the model of carrier impact ionization in the p+ built-in layer. It is shown that characteristics of the diodes are controlled by negative feedback via trapping of holes arisen due to impact ionization, which reduces the electric field and the signal gain. The dependences of collected charge vs. bias voltage and fluence are obtained and their correlation with experimental data is shown.

Author

Dr Elena Verbitskaya (Ioffe Institute, St. Petersburg)

Co-authors

Artem Shepelev (Ioffe Institute, St. Petersburg) Darya Mitina (Ioffe Institute, St. Petersburg) Dr Vladimir Eremin (Ioffe Institute, St. Petersburg)

Presentation materials