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27th RD50 Workshop (CERN)

from Wednesday 2 December 2015 (08:30) to Friday 4 December 2015 (18:00)
CERN (6/2-024)

        : Sessions
    /     : Talks
        : Breaks
2 Dec 2015
3 Dec 2015
4 Dec 2015
AM
09:00
Registration (until 09:30)
09:30
Future Detectors & New Irrad Facilities - Michael Moll (CERN) (until 11:20)
09:30 Welcome - Michael Moll (CERN)  
09:35 Challenges for Particle Detectors at Future Circular Colliders - Werner Riegler (CERN)  
10:10 The new CERN proton irradiation facility - Maurice Glaser (CERN)  
10:30 --- Coffee break ---
11:00 Van-de-Graaff Accelerator at IEAP CTU in Prague [not Friday] - Michael Solar (Czech Technical University (CZ))  
11:20
Defect Characterization (until 13:20)
11:20 Development of the space oriented vacancy – interstitial cluster model - Ernestas Zasinas (Vilnius University)  
11:40 TSC measurements on 200 μm pad diodes, irradiated with 23 MeV protons [Wednesday] - Elena Donegani (University of Hamburg)  
12:00 Remarks on the thermally stimulated current measurement - Juozas Vaitkus (Vilnius University)  
12:20 Effect of proton fluence on radiation defect structure of high-purity silicon for particle detectors - Prof. Pawel Kaminski (Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warszawa, Poland)  
12:40 Carrier lifetime variations in pion irradiated and annealed Si - Eugenijus Gaubas (Vilnius university)  
13:00 Discussion on Defect Characterization - Michael Moll (CERN)  
09:00
Sensors with intrinsic gain (until 13:20)
09:00 IV-characterization of silicon sensors irradiated up to 2E16neq/cm^2 - Sven Wonsak (University of Liverpool (GB))  
09:20 The effective bandgap and current related damage rate of highly irradiated silicon sensors - Moritz Wiehe (Albert-Luwdigs-University Freiburg)  
09:40 Drift Mobility and Electric Field in Silicon Detectors Irradiated with Neutrons and Protons up to 1E17 n_eq/cm^2 [Thu/Friday] - Marko Mikuz (Jozef Stefan Institute (SI))  
10:00 Analysis of TCT measurements of highly irradiated silicon pad diodes under forward bias - Christian Scharf (Hamburg University (DE))  
10:20 Tests of the Signal from Minimum Ionising Particles of 50µm Thick Silicon Micro-Strip Sensors after Extreme Fluences above 3E16 Neq cm^2 - Gianluigi Casse (University of Liverpool (GB))  
10:40 Discussion Session on High Fluence Effects/Radiation - Eckhart Fretwurst (II. Institut fuer Experimentalphysik)  
11:00 --- Coffee break ---
11:20 Status of CNM developments on LGAD and iLGAD detectors - Dr Salvador Hidalgo (Centro Nacional de Microelectronica (IMB-CNM-CSIC))  
11:50 Characterization of LGAD sensors from CNM Run 7062 - Isidro Mateu Suau (Centro de Investigaciones Energ. Medioambientales y Tecn. - (ES)  
12:00 Characterization of LGAD sensors from CNM Run 7859 - Sofia Otero Ugobono (Universidade de Santiago de Compostela (ES))  
12:20 Negative feedback in Si detectors with avalanche multiplication - Dr Vladimir Eremin (Ioffe Institute, St. Petersburg)  
12:40 Timing resolution of 300-micron thick LGAD sensors from CNM at testbeam and comparison with simulation. - Nicolo Cartiglia (Universita e INFN Torino (IT))  
13:00 Reading out thin LGADs - Hartmut Sadrozinski (University of California,Santa Cruz (US))  
09:00
3D and Pixel detectors (until 13:20)
09:00 Status of 3D detector activities at CNM - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))  
09:20 Radiation hardness of 3D pixel detectors up to 2e16 neq/cm2 - Joern Lange (IFAE Barcelona)  
09:40 Beam test of 3D pixel detectors up to fluences of 9e15 neq/cm2 - Ivan Lopez Paz (Universitat Autònoma de Barcelona (ES))  
10:00 High resistivity, nitrogen-enriched FZ Si wafers for particle detectors - Mr Michal Kwestarz (Topsil Semiconductor Materials SA, 133 Wolczynska St., 01-919 Warszawa, Poland)  
10:20 Ongoing activities at CiS - Tobias Wittig (CIS Institut fuer Mikrosensorik GmbH (DE))  
10:40 --- Coffee break ---
11:10 Thin n-in-p planar pixel sensor productions at MPP - Natascha Savic (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)  
11:30 Characterization of sensors from US vendor Tezzaron/Novati - Lenny Spiegel (Fermi National Accelerator Lab. (US))  
11:50 PSI-ROC4SENS: a pixel-ROC for sensor studies [Thu/Fr 10:00-12:00] - Stephan Wiederkehr (Paul Scherrer Institut (CH))  
12:10 Power Dissipation Studies on n-in-n Pixel Sensors - Andreas Gisen (Technische Universitaet Dortmund (DE))  
12:30 LGAD and irradiated doping profiles - Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))  
12:50 Discussion: 3D and Planar Detectors - Giulio Pellegrini (Universidad de Valencia (ES)) Gianluigi Casse (University of Liverpool (GB))  
PM
13:20 --- Lunch Break ---
14:20
CMOS sensors and Sensor Producers (until 17:00)
14:20 Radiation hardness studies of neutron and proton irradiated CMOS sensors fabricated in the ams H18 high voltage process - Marcos Fernandez Garcia (Universidad de Cantabria (ES))  
14:40 Status of E-TCT measurements with HV-CMOS test structures - Igor Mandic (Jozef Stefan Institute (SI))  
15:00 Simulations of HV-CMOS - Francisco Rogelio Palomo Pinto (Universidad de Cantabria (ES))  
15:20 --- Coffee break ---
15:50 TCAD simulations of LGAD devices [Wednesday!] - Marco Bomben (Centre National de la Recherche Scientifique (FR))  
16:10 Discussion (HVCMOS & Sensor Producers) - Gianluigi Casse (University of Liverpool (GB))  
17:00
Collaboration Board (Restricted) - Gregor Kramberger (Jozef Stefan Institute (SI)) Juozas Vaitkus (Vilnius University (LT)) (until 18:00)
18:00
Reception (until 20:00)
13:20 --- Lunch Break ---
14:30
Simulations (until 18:30)
14:30 Status of LGAD RD50 projects - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))  
14:50 Discussion on LGAD - Giulio Pellegrini (Universidad de Valencia (ES))  
15:10 KDetSim - a ROOT based detector simulation package - Gregor Kramberger (Jozef Stefan Institute (SI))  
15:30 Comparisson of different non-commercial detector simulation packages - Gregor Kramberger (Jozef Stefan Institute (SI))  
15:50 --- Coffee break ---
16:20 Towards to a new radiation damage model for Synopsys TCAD - Joern Schwandt (Hamburg University (DE))  
16:40 Simulation of LGAD characteristics taking into account negative feedback in detectors with carrier multiplication - Dr Elena Verbitskaya (Ioffe Institute, St. Petersburg)  
17:00 TCAD simulation of Low Gain Avalanche Detectors - Ranjeet Dalal (University of Delhi)  
17:20 TCAD 2D SIMULATIONS FOR PHASE II PIXEL SENSOR DESIGN - Geetika Jain (University of Delhi (IN))  
17:40 Effect of Al2O3 passivation layer in irradiated n-on-p strip sensors [Thursday] - Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))  
18:00 Discussion Session on TCAD Simulations - Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc) Gregor Kramberger (Jozef Stefan Institute (SI))  
20:00
Dinner (until 23:00) (6/2-024 - BE Auditorium Meyrin)
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