Name: 27th RD50 Workshop (CERN)
Start: 2015-12-02T08:30:00+01:00
End: 2015-12-04T18:00:00+01:00
Location: CERN

27th RD50 Workshop (CERN)

from Wednesday, December 2, 2015 (8:30 AM) to Friday, December 4, 2015 (6:00 PM)

Monday, November 30, 2015
Tuesday, December 1, 2015
Wednesday, December 2, 2015

9:00 AM

9:00 AM - 9:30 AM
Room: 6/2-024 - BE Auditorium Meyrin
9:30 AM
9:30 AM - 11:20 AM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

9:30 AM Welcome - Michael Moll (CERN)

9:35 AM Challenges for Particle Detectors at Future Circular Colliders - Werner Riegler (CERN)

10:10 AM The new CERN proton irradiation facility - Maurice Glaser (CERN)

11:00 AM Van-de-Graaff Accelerator at IEAP CTU in Prague [not Friday] - Michael Solar (Czech Technical University (CZ))
11:20 AM
11:20 AM - 1:20 PM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

11:20 AM Development of the space oriented vacancy – interstitial cluster model - Ernestas Zasinas (Vilnius University)

11:40 AM TSC measurements on 200 μm pad diodes, irradiated with 23 MeV protons [Wednesday] - Elena Donegani (University of Hamburg)

12:00 PM Remarks on the thermally stimulated current measurement - Juozas Vaitkus (Vilnius University)

12:20 PM Effect of proton fluence on radiation defect structure of high-purity silicon for particle detectors - Pawel Kaminski (Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warszawa, Poland)

12:40 PM Carrier lifetime variations in pion irradiated and annealed Si - Eugenijus Gaubas (Vilnius university)

1:00 PM Discussion on Defect Characterization - Michael Moll (CERN)
1:20 PM Lunch Break
Lunch Break
1:20 PM - 2:20 PM
Room: 6/2-024 - BE Auditorium Meyrin
2:20 PM
2:20 PM - 5:00 PM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

2:20 PM Radiation hardness studies of neutron and proton irradiated CMOS sensors fabricated in the ams H18 high voltage process - Marcos Fernandez Garcia (Universidad de Cantabria (ES))

2:40 PM Status of E-TCT measurements with HV-CMOS test structures - Igor Mandic (Jozef Stefan Institute (SI))

3:00 PM Simulations of HV-CMOS - Francisco Rogelio Palomo Pinto (Universidad de Cantabria (ES))

3:50 PM TCAD simulations of LGAD devices [Wednesday!] - Marco Bomben (Centre National de la Recherche Scientifique (FR))

4:10 PM Discussion (HVCMOS & Sensor Producers) - Gianluigi Casse (University of Liverpool (GB))
5:00 PM

5:00 PM - 6:00 PM
Room: 6/2-024 - BE Auditorium Meyrin

6:00 PM

6:00 PM - 8:00 PM
Room: 6/2-024 - BE Auditorium Meyrin
Thursday, December 3, 2015
9:00 AM
9:00 AM - 1:20 PM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

9:00 AM IV-characterization of silicon sensors irradiated up to 2E16neq/cm^2 - Sven Wonsak (University of Liverpool (GB))

9:20 AM The effective bandgap and current related damage rate of highly irradiated silicon sensors - Moritz Wiehe (Albert-Luwdigs-University Freiburg)

9:40 AM Drift Mobility and Electric Field in Silicon Detectors Irradiated with Neutrons and Protons up to 1E17 n_eq/cm^2 [Thu/Friday] - Marko Mikuz (Jozef Stefan Institute (SI))

10:00 AM Analysis of TCT measurements of highly irradiated silicon pad diodes under forward bias - Christian Scharf (Hamburg University (DE))

10:20 AM Tests of the Signal from Minimum Ionising Particles of 50µm Thick Silicon Micro-Strip Sensors after Extreme Fluences above 3E16 Neq cm^2 - Gianluigi Casse (University of Liverpool (GB))

10:40 AM Discussion Session on High Fluence Effects/Radiation - Eckhart Fretwurst (II. Institut fuer Experimentalphysik)

11:20 AM Status of CNM developments on LGAD and iLGAD detectors - Salvador Hidalgo (Centro Nacional de Microelectronica (IMB-CNM-CSIC))

11:50 AM Characterization of LGAD sensors from CNM Run 7062 - Isidro Mateu Suau (Centro de Investigaciones Energ. Medioambientales y Tecn. - (ES)

12:00 PM Characterization of LGAD sensors from CNM Run 7859 - Sofia Otero Ugobono (Universidade de Santiago de Compostela (ES))

12:20 PM Negative feedback in Si detectors with avalanche multiplication - Vladimir Eremin (Ioffe Institute, St. Petersburg)

12:40 PM Timing resolution of 300-micron thick LGAD sensors from CNM at testbeam and comparison with simulation. - Nicolo Cartiglia (Universita e INFN Torino (IT))

1:00 PM Reading out thin LGADs - Hartmut Sadrozinski (University of California,Santa Cruz (US))
1:20 PM Lunch Break
Lunch Break
1:20 PM - 2:30 PM
Room: 6/2-024 - BE Auditorium Meyrin
2:30 PM
2:30 PM - 6:30 PM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

2:30 PM Status of LGAD RD50 projects - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

2:50 PM Discussion on LGAD - Giulio Pellegrini (Universidad de Valencia (ES))

3:10 PM KDetSim - a ROOT based detector simulation package - Gregor Kramberger (Jozef Stefan Institute (SI))

3:30 PM Comparisson of different non-commercial detector simulation packages - Gregor Kramberger (Jozef Stefan Institute (SI))

4:20 PM Towards to a new radiation damage model for Synopsys TCAD - Joern Schwandt (Hamburg University (DE))

4:40 PM Simulation of LGAD characteristics taking into account negative feedback in detectors with carrier multiplication - Elena Verbitskaya (Ioffe Institute, St. Petersburg)

5:00 PM TCAD simulation of Low Gain Avalanche Detectors - Ranjeet Dalal (University of Delhi)

5:20 PM TCAD 2D SIMULATIONS FOR PHASE II PIXEL SENSOR DESIGN - Geetika Jain (University of Delhi (IN))

5:40 PM Effect of Al2O3 passivation layer in irradiated n-on-p strip sensors [Thursday] - Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

6:00 PM Discussion Session on TCAD Simulations - Gregor Kramberger (Jozef Stefan Institute (SI)) Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)
8:00 PM

8:00 PM - 11:00 PM
Room: 6/2-024 - BE Auditorium Meyrin
Friday, December 4, 2015
9:00 AM
9:00 AM - 1:20 PM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

9:00 AM Status of 3D detector activities at CNM - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

9:20 AM Radiation hardness of 3D pixel detectors up to 2e16 neq/cm2 - Joern Lange (IFAE Barcelona)

9:40 AM Beam test of 3D pixel detectors up to fluences of 9e15 neq/cm2 - Ivan Lopez Paz (Universitat Autònoma de Barcelona (ES))

10:00 AM High resistivity, nitrogen-enriched FZ Si wafers for particle detectors - Michal Kwestarz (Topsil Semiconductor Materials SA, 133 Wolczynska St., 01-919 Warszawa, Poland)

10:20 AM Ongoing activities at CiS - Tobias Wittig (CIS Institut fuer Mikrosensorik GmbH (DE))

11:10 AM Thin n-in-p planar pixel sensor productions at MPP - Natascha Savic (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

11:30 AM Characterization of sensors from US vendor Tezzaron/Novati - Lenny Spiegel (Fermi National Accelerator Lab. (US))

11:50 AM PSI-ROC4SENS: a pixel-ROC for sensor studies [Thu/Fr 10:00-12:00] - Stephan Wiederkehr (Paul Scherrer Institut (CH))

12:10 PM Power Dissipation Studies on n-in-n Pixel Sensors - Andreas Gisen (Technische Universitaet Dortmund (DE))

12:30 PM LGAD and irradiated doping profiles - Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))

12:50 PM Discussion: 3D and Planar Detectors - Gianluigi Casse (University of Liverpool (GB)) Giulio Pellegrini (Universidad de Valencia (ES))

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