Speaker
Marko Mikuz
(Jozef Stefan Institute (SI))
Description
Electric field in silicon irradiated with neutrons up to 1e17 n_eq/cm^2 and PS protons up to 3e16 p/cm^2 was investigated by edge-TCT. Methods for absolute determination of electric field were developed and electric field profiles in the silicon bulk obtained. From the v(E) dependence mobility degradation with fluence was extracted. A 1/sqrt(Phi) dependence of mobility on fluence was obseved for both irradiations with protons provoking ~20 % more degradation at equal NIEL. The observed mobility degradation and the values of electric field indicate substantial reduction of trapping from linear extrapolation of low fluence values.
Primary author
Marko Mikuz
(Jozef Stefan Institute (SI))
Co-authors
Gregor Kramberger
(Jozef Stefan Institute (SI))
Igor Mandic
(Jozef Stefan Institute (SI))
Marko Zavrtanik
(Jozef Stefan Institute (SI))
Vladimir Cindro
(Jozef Stefan Institute (SI))
