Speaker
Dr
Salvador Hidalgo
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
Description
We will present the last technological developments at CNM on LGAD and iLGAD detectors. The last electrical performances for pad and strip LGADs will also be presented, showing that the fabricated LGAD detectors have a voltage capability higher than 1000 V with leakage currents in the 20 nA/cm2 range, and a linear gain in the typical operating reverse voltage values (200 to 800 V) in the range of 5-10. However, red laser scanning measurements revealed a non-uniform multiplication across the strip LGAD, basically due to technological constrains.
Primary author
Dr
Salvador Hidalgo
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
Co-authors
Dr
Angel Merlos
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
Christian Gallrapp
(CERN)
Dr
David Flores
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
Dr
David Quirion
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
Dr
Giulio Pellegrini
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
Hartmut Sadrozinski
(University of California,Santa Cruz (US))
Ivan Vila Alvarez
(Universidad de Cantabria (ES))
Mrs
Mar Carulla
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Mrs
Marta Baselga
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
Michael Moll
(CERN)
Dr
Pablo Fernandez-Martinez
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
Vitaliy Fadeyev
(University of California,Santa Cruz (US))
Zachary Lev Galloway
Zhijun Liang
(University of California,Santa Cruz (US))
