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Prof. Atilà Herms11/07/2016, 09:00
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Lluis Garrido Beltran (University of Barcelona (ES))11/07/2016, 09:05
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David Gascon (University of Barcelona (ES)), Rafael Ballabriga Sune (CERN)11/07/2016, 09:15
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Erik Heijne (Czech Technical University (CZ))11/07/2016, 09:30
The explanation of the photo-electric effect in 1905 literally shed light on the structure of matter. Nevertheless, it still took 40 years before the first practical solid devices exploited this understanding for detection of ionizing nuclear particles. From then on, during 70 years a succession of innovations has led to widespread use of semiconductor nuclear detectors in physics, materials...
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Prof. Francesc Salvat (University of Barcelona)11/07/2016, 10:50
Introductory concepts: cross section, mean free path and attenuation coefficients. Interaction of photons with matter: photoelectric effect (Auger electrons and fluorescence photons), Compton scattering, pair production, Rayleigh scattering. Interaction of electrons with matter. Emphasis on materials commonly used as radiation detectors (Si, GaAs, CdTe, CdZnTe, Ge)
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Erik Heijne (Czech Technical University (CZ))11/07/2016, 11:40
Semiconductor properties, the p-n junction (depletion width, capacitance), fluctuations on the charge (Fano factor), signal induction, drift, diffusion and the small pixel effect. Detectors classification (for example: 1. Hybrid (1.a. hybrid, 1.b. hybrid+3d), 2. Monolithic Active Pixel Sensors (2.a CMOS with charge collection on epitaxial layer, 2.b. Depleted MAPS (HV or HR substrate), CMOS on...
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Erik Heijne (Czech Technical University (CZ))11/07/2016, 12:30
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Prof. Francesc Salvat (University of Barcelona)11/07/2016, 14:00
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Prof. Francesc Serra-Graells (IMB-CNM)11/07/2016, 15:00
CMOS transistors, Moore’s law, technology roadmap, operation and characteristics (equations for strong and weak inversion), (very short description of bipolars, circuits where they are used) small signal circuit, matching, noise, passive components in CMOS technologies, radiation effects, technology scaling.
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Paul O'Connor (Department of Physics)11/07/2016, 17:00
Analog CMOS circuit design: The charge sensitive amplifier (Noise mechanisms, ENC, noise sources, dimensioning the input transistor, the preamplifier reset, the shaper, baseline stabilization, discriminator, sample and hold, ADCs, TDCs, packaging and interconnects, examples.
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Paul O'Connor (Department of Physics)12/07/2016, 09:00
Analog CMOS circuit design: The charge sensitive amplifier (Noise mechanisms, ENC, noise sources, dimensioning the input transistor, the preamplifier reset, the shaper, baseline stabilization, discriminator, sample and hold, ADCs, TDCs, packaging and interconnects, examples.
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Sami Vähänen (VTT technical research centre of Finland)12/07/2016, 11:00
Si and compound semiconductor sensor design (distances, implantation, interpixel capacitance), edgeless Si sensors. Interconnections: Bump bonding, TSV (types, processing steps, materials involved, etc.)
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Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))12/07/2016, 14:05
Radiation hardness in semiconductor detectors. 3D detectors.
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Michael Campbell (CERN)12/07/2016, 15:05
Applications of hybrid pixel detectors: medical, space applications, dosimetry, material science, electron microscopy
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Michael Campbell (CERN)12/07/2016, 16:35
Applications of hybrid pixel detectors: medical, space applications, dosimetry, material science, electron microscopy.
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Rafael Ballabriga Sune (CERN)13/07/2016, 09:00
ASICs for spectroscopic X-Ray imaging, digitization methods, count-rate, strategies for dealing with high fluxes, charge summing and hit allocation architectures, power consumption, detector tiling.
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Thanushan Kugathasan (CERN)13/07/2016, 11:10
Passive monolithic pixel sensors and active monolithic pixel sensors: CCDs, CMOS with charge collection on epitaxial layer, Depleted MAPS (HV or HR substrate), CMOS on SOI, DEPFETs
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Anna Bergamaschi (PSI)13/07/2016, 14:00
Synchrotron radiation and XFEL experiments exploit the iteraction of X-rays with the sample under examination in order to investigate its properties.
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Depending on the application, the detector should detect the X-rays transmitted, scattered, diffracted or produced by the samples or the photoelectrons emitted, providing high temporal, spatial or energy resolution.
The requirements on the... -
Prof. Margarida Hernanz (ICE (CSIC-IEEC))13/07/2016, 17:30
Space applications of semiconductor detectors: pixel detectors, strip detector, Compton detectors. Examples: AMS, Astrogam, LOFT, Athena.
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Prof. Angel Rodriguez-Vazquez (IMSE-CNM)14/07/2016, 09:00
- Basic Concepts
- Milestones and Trends
- Imaging vs Computer Vision
- Photodiodes and Pixels
- Readout and Sensor Architectures
- Exemplary 2-D Sensors
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Prof. Ricardo Carmona (IMSE-CNM)14/07/2016, 11:00
- Motivations for Time-of-Flight Estimation.
- Evolution of 3D Shape Measurement
- ToF Estimation in CMOS Technology
- Single-Photon Detection in CMOS
- SPAD Arrays For 3D Imaging
- Si-PM For PET and HEP
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Angelo Rivetti (Universita e INFN Torino (IT))14/07/2016, 14:00
Review of photodetectors model: APD, SPAD, SiPM. Front end electronics for photodetectors: input stage (charge amplifier, transimpedance, RF amplifiers), effect of interconnetions. Optimal processing for timing: design considerations, filtering, TDC design, etc. Examples of readout ASICs for photodetection.
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14/07/2016, 16:20
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14/07/2016, 16:50
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Paolo Livi (DECTRIS)14/07/2016, 17:10
DECTRIS is a technology leader in hybrid photon counting X-Ray detection. The DECTRIS photon counting detectors have transformed basic research at synchrotron light sources, as well as in the laboratory and with industrial X-Ray applications. This pioneering technology is the basis of a broad range of products, all scaled to meet the needs of various applications. The focus of today’s talk...
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Vladimir Jovanovic (Panalytical)14/07/2016, 17:30
PANalytical provides solutions for the chemical (which and how much of certain elements) and structural (in what molecular structure) analysis of a wide variety of materials. Our customers can be found in virtually all markets including building materials, metals, mining, food, pharma, cosmetics, polymers, oils, plastics, thin film metrology, nanomaterials and many more in industries and...
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Sami Vähänen (VTT technical research centre of Finland)14/07/2016, 17:50
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Ali Atharifard (MARS Bio-imaging Ltd (MBI))14/07/2016, 18:10
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Lubos Tomesek (Jablotron)14/07/2016, 18:30
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Angelo Rivetti (Universita e INFN Torino (IT))15/07/2016, 09:00
Digitizers for photodetectors: ADCs, waveform sampling, etc. Digital pulse processing with emphais on timing properties extraction.
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Chiara Casella (Eidgenoessische Tech. Hochschule Zuerich (CH))15/07/2016, 11:00
Applications of photodetectors in high energy physics and medical imaging. Focused on solid state (APDs, SPADs, SIPM) but in context of PMT technology.
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Dr Jordi Andilla (ICFO)15/07/2016, 14:30
pplication of photodetectors in Super-resolution Microscopy, Single Molecule Spectroscopy, Time-resolved Fluorescence Spectroscopy
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David Gascon (University of Barcelona (ES)), Prof. Jose M. Gómez (ICCUB-IEEC)15/07/2016, 16:30
Application of photodetctors in ground and space astrophsyics instruments. CD and CMOS Imaging Devices for Ground Based Telescopes and Space Missions. Cosmic ray amd VHE particle detection with solid state photo-sensors.
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Prof. Francesc Salvat (University of Barcelona)
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Semiconductor detector readout chips with pulse processing electronics have made possible spectroscopic X-ray imaging, bringing an improvement in the overall image quality and, in the case of medical imaging, a reduction in the X-ray dose delivered to the patient. In this contribution we review the state of the art in semiconductor-detector readout ASICs for spectroscopic X-ray imaging with...
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