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14th RD50 Workshop

3–5 Jun 2009
Freiburg, Germany
Europe/Zurich timezone

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Contribution List

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  1. 27. Welcome to the 14th RD50 Workshop
    Mara Bruzzi (Dipartimento di Fisica), Michael Moll (CERN), Ulrich Parzefall (Uni Freiburg)
    03/06/2009, 13:30
  2. 14. Capacitance Measurements and Depletion Voltage for Annealed Fz and MCz Diodes
    Jessica Metcalfe (Department of Physics and Astronomy-University of New Mexico-Unk)
    03/06/2009, 13:50
    We irradiated n and p-type Float Zone (FZ) and magnetic Czochralski (MCz) silicon diodes with protons up to 1.4 x 10^15 neq/cm2. The devices were annealed at 60 °C and measured after 10, 80, 1,000 and 10,000 minutes. Capacitance and leakage current measurements were performed at room temperature and the depletion voltage extracted. A comparison of the different device types will be presented.
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  3. 28. Determination of depletion voltage from CV, IV and CCE measurements on Pad Detectors
    Katharina Kaska (Technische Universitaet Wien)
    03/06/2009, 14:10
  4. 16. Electrical Characterization of Irradiated Silicon Diodes at Different Temperature
    Vladimir Khomenkov (Hamburg University)
    03/06/2009, 14:30
    For CV/IV characterization of irradiated silicon detectors a standard temperature of 20°C and frequency of 10 kHz are adopted. However, at high irradiation level it is necessary to perform measurements at lower temperature. The obtained values Vfd and Id depend on the temperature and frequency, as well as on material and radiation type and the fluence. To study this dependence CV/IV...
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  5. 15. TCT-Measurements of mixed irradiated Magentic Czochralski Diodes in the SLHC-Scenario
    Robert Eber (IEKP, UNI-Karlsruhe (TH))
    03/06/2009, 14:50
    Magnetic Czochralski Diodes both n-type and p-type of 300um thickness were irradiated with protons and neutrons to fluences corresponding to different Radii in the CMS-Tracker. IV- and CV-Measurements were performed to study the depletion behaviour of diodes with increasing current. Measurements with a TCT-Setup with red and infrared laser light are in progress to extract trapping times and...
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  6. 24. Charge collection and trapping effects in n-type and p-type epitaxial silicon diodes after proton irradiation
    Joern Lange (Hamburg University)
    03/06/2009, 15:10
    Epitaxial silicon pad diodes of p-type (150 µm, ST material) and n-type (75 µm, 100 µm, 150 µm, both ST and DO) material have been investigated after 24 GeV/c proton irradiation at CERN PS. Time-resolved TCT measurements with 670 nm laser light (front injection) were performed for 150 µm thick diodes and thus the effective trapping time constants for electrons (n-type) and holes (p-type) could...
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  7. 5. Determination of strip detector properties by using Edge-TCT
    Gregor Kramberger (Jozef Stefan Institute)
    03/06/2009, 16:00
    Transient Current Technique (TCT) was used to evaluate p-type silicon micro-strip detectors. A pulsed IR laser focused to a spot of to 6 μm illuminated the detector edge so that the beam was parallel with the surface and perpendicular to the strips. In that way electron hole pairs were created at known depth in the detector. Scans over the entire detector thickness with 0.5 μm resolution were...
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  8. 29. New TCT setups at CERN and Louvain
    Manuel Fahrer (CERN)
    03/06/2009, 16:20
    New strip sensitive TCT & CCE setups are under construction in colaboration between CERN and Louvain. Mechanics and electronics are realized in a twin solution in both test stations. Focused red laser beam will be used for standard and strip sensitive TCT. Sr 90 source and IR laser will be used for calibration and fast CCE. A fix optical fiber setup with splitters and shutters avoids...
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  9. 11. Predictions on charge collection efficiency in heavily irradiated Si detectors basing on the approach of active base region
    Elena Verbitskaya (Ioffe Physical Technical Inst.)
    03/06/2009, 16:40
    The approach of an active base with a non-zero electric field in heavily irradiated Si detectors is further developed for estimations of the collected charge up to the fluences of super-LHC range (10^16 cm^-2). The steady-state electric field in heavily irradiated detector has double peak shape with two maxima and the base region in between, in which the electric field is about few kV/cm....
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  10. 2. Contributions of Electrons and Holes to Total Collected Charge in Heavily Irradiated Si Pad and Strip/Pixel Detectors: A Comparison Simulation Study
    Zheng Li (BNL)
    03/06/2009, 17:00
    A simplified approach to compare quantitatively the contributions of electrons and holes to the total collected charge in heavily irradiated Si pad detectors and strip/pixel detectors has been developed in this study. By applying a step function to approximate the weighting field and a step function to approximate the linear- and/or double junction- electric field, in the detector, one can...
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  11. 39. Bias on-off proton irradiation results on MCz-Si and Fz-si detectors
    Jasu Haerkoenen (Helsinki Institute of Physics HIP)
    03/06/2009, 17:20
  12. 9. Sensor R&D for an upgrade of the CMS pixel barrel
    Jennifer Ann Sibille, Jennifer Ann Sibille (University of Kansas-Unknown-Unknown)
    03/06/2009, 17:40
  13. 30. Discussion Session
    Eckhart Fretwurst (Hamburg University), Gregor Kramberger (Jozef Stefan Institute)
    03/06/2009, 18:00
  14. 41. Electrical characteristics of ATLAS07 Series I large detectors.
    Marcela Mikestikova (Elementary Particle Division-Institute of Physics-Acad. of Scien)
    04/06/2009, 08:45
    Electrical characteristics of ATLAS07 Series I large detectors in Prague as step before irradiation was done.
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  15. 42. Irradiation program in Prague - status.
    Peter Kodys (Faculty of Mathematics and Physics), Dr Peter Kodys (Charles University)
    04/06/2009, 09:05
    Irradiation program in Prague is preparing on 2 possible way: on Cyclotron-based fast neutron facility at NPI Rez and in Experimental reactor at NRI, Rez. Basic conditions of this and plan for irradiation of ATLAS07 Series I large detectors will be presented .
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  16. 6. Comparison of the CCE properties of microstrip detectors made with different substrates and irradiated with protons and neutrons at different temperature
    Affolder Anthony (University of Liverpool)
    04/06/2009, 09:25
    The comparison of the charge collection properties of microstrip detectors made with FZ and MCz substrates are compared after irradiation with 26MeV and 24GeV/c protons and reactor neutrons. The lower energy proton irradiations took place at low temperature. The irradiations with the higher energy protons in the PS have been performed at room (>30oC) and cooled (about 0oC) T conditions. Their...
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  17. 8. Anneling of Charge Collection in Strip sensors and the Depletion Voltage
    Hartmut Sadrozinski (SCIPP, UC santa Cruz)
    04/06/2009, 09:45
    we have irradiated n-type and p-type magnetic Czochralski and Float Zone silicon detector to proton, pion and neutron fluences up to 1.3*1015 neq/cm2. The data are collected right after irradiation and after elevated temperature annealing at 60oC, corresponding to several years of annealing at room temperature. As a function of bias voltage V, the following electrical parameters were measured:...
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  18. 40. Neutron irradiation for p-type sensors. Detector characterization with ALIBAVA system
    Urmila Soldevila
    04/06/2009, 10:05
    This work describes the characterization of p-type microstrip detectors from two different manufacturers, Hamamatsu and CNM carried out at IFIC-Valencia. The sensors have been irradiated with neutrons at several fluences. In order to evaluate the macroscopic radiation damage, IV and charge collection measurements have been carried out by means of a radioactive source setup as well as by an...
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  19. 12. The avalanche effect in operation of heavily irradiated silicon p-i-n detectors
    Vladimir Eremin (Ioffe Physical Technical Institute)
    04/06/2009, 10:55
    The recent study of silicon detectors irradiated up to fluences beyond 10^15 neutron/cm^2 demonstrated an increase of the collected charge up to the value that is even higher than the charge initially generated by the detected particles. In the present investigation this effect is analyzed in terms of avalanche process in the abrupt p-n junctions. On the basis of double peak electric field...
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  20. 7. Can we claim multiplication effects in irradiated silicon?
    Gianluigi Casse (University of Liverpool)
    04/06/2009, 11:15
    New measurements to very high voltage are here shown that can give more support to the appearence of charge carrier multiplication effects in irradiated Micron silicon microstrip detectors
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  21. 10. Measurements of lorentzangle in highly irradiated silicon-strip-detectors
    Michael Schneider (University Karlsruhe)
    04/06/2009, 11:35
    The planned SLHC-Upgrade will result in a 10 times higher luminosity and therefore higher radiation-damage to the silicon-detectors in the tracker-subsystem of CMS. The magnetic field inside the tracker causes a shift of chargecarriers inside the detector-silicon resulting in a displacement of the measured position to the real position of the particles track. The angle the carriers are shifted...
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  22. 22. Performance of irradiated MCz detectors in a test beam environment
    Teppo Maeenpaeae (Helsinki Institute of Physics HIP)
    04/06/2009, 11:55
    The Silicon Beam Telescope (SiBT07) is a reference tracker used to characterize position sensitive detectors. I present selected testbeam results from irradiated MCz strip detector studies and discuss analysis methods associated with those results.
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  23. 3. Commissioning the CMS pixel detector with cosmic ray data
    Prof. Vincenzo Chiochia (Universitat Zurich)
    04/06/2009, 12:15
    The CMS Pixel detector, consisting of three barrel layers and two endcap disks at each barrel end, was installed in the CMS experiment in summer 2008. After a preliminary commissioning phase with pulse injections the detector participated in data taking with cosmic ray triggers and 3.8T field. We report on the first running experience with CMS and present preliminary results on detector...
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  24. 37. The Future of Silicon Solar Cells
    Prof. Eicke Weber (Director of the Fraunhofer Institute for Solar Energy Systems (ISE) and a Professor of physics and applied sciences at the Albert Ludwig University of Freiburg)
    04/06/2009, 14:00
  25. 25. Prediction of the macroscopic "reverse annealing" using microscopic defect concentrations
    Alexandra Junkes (Hamburg University)
    04/06/2009, 14:45
    Isothermal annealing studies were carried out at 80 °C on 75 um thick standard and oxygen enriched Epitaxial (EPI) material, irradiated with 1 MeV neutron fluences of 2E14 n/cm2 and 1E15 n/cm2. Depletion voltage and leakage current were obtained by CV and IV measurements while defect concentrations were measured by means of Thermally Stimulated Current technique (TSC). The microscopic results...
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  26. 4. Annealing induced evolution of defect centers in epitaxial silicon irradiated with high proton fluences
    Pawel Kaminski (Institute of Electronic Materials Technology)
    04/06/2009, 15:05
    High-resolution photoinduced transient spectroscopy (HRPITS) has been used to studying the effect of isochronal annealing temperature on the properties defect centers in epitaxial silicon exposed to irradiation of 24 GeV/c protons with fluences ranging from 5x10^15 to 1.6x10^16cm^-2. The defect levels for standard and oxygenated epilayers have been compared. The main decrease in the...
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  27. 20. TSC studies on MCz silicon pad detectors irradiated with neutrons
    Monica Scaringella (University of Florence)
    04/06/2009, 15:55
    We report on the investigation of the radiation damage induced by neutron irradiation on MCz silicon pad detectors by TSC technique.
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  28. 13. Comparative study of the electric field dependent variations of carrier recombination and drift parameters in MCZ Si detectors irradiated by different fluences of neutrons
    Prof. Juozas Vaitkus (Vilnius University)
    04/06/2009, 16:15
    Simultaneous measurements of the characteristics of photoconductivity transients, TOF, SCD (TCT) and SCLC by using various regimes of the surface and bulk excitation as well as current transient differential and integral registration regimes have been performed to clarify the electric field and neutron fluence dependent variations of carrier recombination and drift parameters in pad-detectors...
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  29. 17. Effect of microscopic defects in n-type irradiated MCz silicon detectors: Impact on macroscopic parameters
    Dr Ajay Kumar Srivastava (UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un)
    04/06/2009, 16:35
    In order to study the effect of microscopic defects on macroscopic detector parameters, we have used synopsis T-CAD device simulator for four-level numerical modeling of radiation induced deep level traps using parameters obtained from experimental measurements. The resulting analysis techniques has been validated and calibrated by means of detailed comparison of the simulation with...
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  30. 19. Carrier lifetime variations in MCZ Si during irradiation by 3 - 8 MeV protons at temperatures in the range of 40 -300 K
    Prof. Juozas Vaitkus (Vilnius University)
    04/06/2009, 16:55
    Variations of carrier recombination lifetime, linearly dependent on radiation induced defects density, have been in situ examined during irradiations by stopped and penetrative protons in MCZ Si wafers of 350 m thickness. Irradiations and in situ lifetime measurements were performed at different stabilized temperatures in the range of 40 -300 K. Registration of the averaged carrier decay...
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  31. 32. Discussion Session
    04/06/2009, 17:15
  32. 21. Status of the Planar Pixel Production at CiS
    Anna Macchiolo (Max-Planck-Institut fuer Physik-Unknown-Unknown)
    05/06/2009, 09:00
    A production of Planar Pixel Sensors in the framework of the RD50 Collaboration is ongoing at CiS (Erfurt, Germany) in view of the pixel system upgrade of the ATLAS and CMS detectors for Super-LHC. The production is divided in two batches to investigate both the n-in-n and the n-in-p technologies. The sensors will be realized on Fz and MCz material. The designs for the two batches are...
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  33. 18. Test Beam Measurements with 3D-ddtc Silicon Strip Detectors
    Michael Koehler (University of Freiburg)
    05/06/2009, 09:20
    3D double-sided double type column (ddtc) detectors were measured in a test beam at the CERN SPS in 2008. It was performed in the framework of RD50 and CMS and was provided by the University of Helsinki. The CMS silicon beam telescope and CMS tracker readout electronics were utilised. This talk focuses on a device under test produced by FBK-IRST (Trento). The current status of the analysis,...
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  34. 0. Evaluation of novel pixel sensors for future tracking detectors
    Alessandro La Rosa (CERN)
    05/06/2009, 09:40
    An upgrade of the LHC towards a 10 times higher luminosity will require tracking detectors with unprecedented radiation tolerance. Furthermore, the high track density will call for fast and high granularity detectors, which also fulfill the boundary conditions of low radiation length and low costs. Over the last years several promising material developments and design concepts for the next...
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  35. 45. 3D testbeam at the Diamond light source
    Dr Chris Parkes (Glasgow), Chris Parkes (Department of Physics and Astronomy)
    05/06/2009, 10:00
  36. 23. First characterizations of thin SOI and epitaxial n-in-p sensors
    Michael Beimforde (Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)
    05/06/2009, 11:10
    We will present the results of first leakage-current and capacitance measurements of our 75 and 150 micron thin SOI production of n-in-p sensors before irradiation. They exhibit low dark currents and depletion voltages. A comparison between the performance of the standard and a reduced guard ring structure will be shown. Furthermore, the RD50 production of thin epitaxial n-in-p sensors, made...
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  37. 26. Online Radiation Dose Measurement System for ATLAS experiment
    Igor Mandic (Jožef Stefan Institute)
    05/06/2009, 11:30
    In LHC experiments it will be important to continuously monitor the radiation doses to follow the level of degradation of detectors and electronics and to correctly predict future radiation damage. A system for online radiation monitoring using semiconductor radiation sensors was installed in the ATLAS experiment. Ionizing dose in SiO2 will be measured from increase of threshold voltage in...
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  38. 44. CNM status report
    Dr Celeste Fleta (University of Glasgow)
    05/06/2009, 11:50
  39. 43. ALIBAVA - Status of distribution and Discussion on further activities
    Gianluigi Casse (University of Liverpool)
    05/06/2009, 12:10
  40. 35. Discussion Session FDS
    05/06/2009, 13:50
  41. 36. Discussion Session Pixel and New structures
    05/06/2009, 14:20
  42. 1. Simulation study for improving the breakdown voltage of Si sensors for use in High Energy Physics (HEP) Experiments
    Ms Pooja Saxena (Research Scholar)
    Full Detector Systems
    To ensure a reliable long term performance in the harsh radiation environment of present and future high energy experiments, silicon detectors are required to be operated at voltages beyond, sometimes quite far from, the full depletion voltages. It is, thus desirable to improve breakdown voltage characteristics of silicon sensors, and floating guard rings are generally employed to perform this...
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