Choose timezone

Your profile timezone:

Use timezone based on:

Event/category Custom

Select a custom timezone

Login

14th RD50 Workshop

3–5 Jun 2009

Freiburg, Germany

Europe/Zurich timezone

Support

Author List

Affolder Anthony (University of Liverpool)
- Author in Can we claim multiplication effects in irradiated silicon?
- Author in Comparison of the CCE properties of microstrip detectors made with different substrates and irradiated with protons and neutrons at different temperature
Julian Becker (Hamburg University)
- Co-author in Charge collection and trapping effects in n-type and p-type epitaxial silicon diodes after proton irradiation
Michael Beimforde (Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)
- Author in First characterizations of thin SOI and epitaxial n-in-p sensors
Gianluigi Casse (University of Liverpool)
- Author in Can we claim multiplication effects in irradiated silicon?
- Author in Comparison of the CCE properties of microstrip detectors made with different substrates and irradiated with protons and neutrons at different temperature
Tomas Čeponis (Vilnius University)
- Co-author in Comparative study of the electric field dependent variations of carrier recombination and drift parameters in MCZ Si detectors irradiated by different fluences of neutrons
Vincenzo Chiochia (Universitat Zurich)
- Author in Commissioning the CMS pixel detector with cosmic ray data
Vladimir Cindro (Jožef Stefan Institute)
- Co-author in Determination of strip detector properties by using Edge-TCT
A. Dierlamm (IEKP, UNI-Karlsruhe (TH))
- Co-author in TCT-Measurements of mixed irradiated Magentic Czochralski Diodes in the SLHC-Scenario
Robert Eber (IEKP, UNI-Karlsruhe (TH))
- Author in TCT-Measurements of mixed irradiated Magentic Czochralski Diodes in the SLHC-Scenario
Doris Eckstein (UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un)
- Co-author in Effect of microscopic defects in n-type irradiated MCz silicon detectors: Impact on macroscopic parameters
Doris Eckstein (Hamburg University)
- Co-author in Prediction of the macroscopic "reverse annealing" using microscopic defect concentrations
Doris Eckstein (Hamburg University)
- Co-author in Electrical Characterization of Irradiated Silicon Diodes at Different Temperature
Vladimir Eremin (Ioffe Physical Technical Inst.)
- Co-author in Predictions on charge collection efficiency in heavily irradiated Si detectors basing on the approach of active base region
Vladimir Eremin (Ioffe Physical Technical Institute)
- Author in The avalanche effect in operation of heavily irradiated silicon p-i-n detectors
Eckhart Fretwurst (UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un)
- Co-author in Effect of microscopic defects in n-type irradiated MCz silicon detectors: Impact on macroscopic parameters
Eckhart Fretwurst (Institute for Experimental Physics, University of Hamburg)
- Co-author in Annealing induced evolution of defect centers in epitaxial silicon irradiated with high proton fluences
Eckhart Fretwurst (Hamburg University)
- Co-author in Prediction of the macroscopic "reverse annealing" using microscopic defect concentrations
Eckhart Fretwurst (Hamburg University)
- Co-author in Charge collection and trapping effects in n-type and p-type epitaxial silicon diodes after proton irradiation
Eckhart Fretwurst (Hamburg University)
- Co-author in Electrical Characterization of Irradiated Silicon Diodes at Different Temperature
Eugenijus Gaubas (Vilnius University)
- Co-author in Comparative study of the electric field dependent variations of carrier recombination and drift parameters in MCZ Si detectors irradiated by different fluences of neutrons
Eugenijus Gaubas (Vilnius University)
- Co-author in Carrier lifetime variations in MCZ Si during irradiation by 3 - 8 MeV protons at temperatures in the range of 40 -300 K
Jasu Haerkoenen (Helsinki Institute of Physics HIP)
- Author in Bias on-off proton irradiation results on MCz-Si and Fz-si detectors
Jaakko Härkönen (Helsinki Institute of Physics, CERN/PH)
- Co-author in The avalanche effect in operation of heavily irradiated silicon p-i-n detectors
Jaakko Härkönen (Helsinki Institute of Physics, CERN/PH)
- Co-author in Predictions on charge collection efficiency in heavily irradiated Si detectors basing on the approach of active base region
Martin Hoeferkamp (University of New Mexico)
- Co-author in Capacitance Measurements and Depletion Voltage for Annealed Fz and MCz Diodes
Alexandra Junkes (Hamburg University)
- Author in Prediction of the macroscopic "reverse annealing" using microscopic defect concentrations
Pawel Kaminski (Institute of Electronic Materials Technology)
- Author in Annealing induced evolution of defect centers in epitaxial silicon irradiated with high proton fluences
Katharina Kaska (Technische Universitaet Wien)
- Author in Determination of depletion voltage from CV, IV and CCE measurements on Pad Detectors
Vladimir Khomenkov (Hamburg University)
- Author in Electrical Characterization of Irradiated Silicon Diodes at Different Temperature
Robert Klanner (UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un)
- Co-author in Effect of microscopic defects in n-type irradiated MCz silicon detectors: Impact on macroscopic parameters
Peter Kodys (Faculty of Mathematics and Physics)
- Author in Irradiation program in Prague - status.
Peter Kodys (Charles University)
- Author in Irradiation program in Prague - status.
Michael Koehler (University of Freiburg)
- Author in Test Beam Measurements with 3D-ddtc Silicon Strip Detectors
Roman Kozlowski (Institute of Electronic Materials Technology)
- Co-author in Annealing induced evolution of defect centers in epitaxial silicon irradiated with high proton fluences
Gregor Kramberger (Jozef Stefan Institute)
- Author in Determination of strip detector properties by using Edge-TCT
Joern Lange (Hamburg University)
- Author in Charge collection and trapping effects in n-type and p-type epitaxial silicon diodes after proton irradiation
Alessandro La Rosa (CERN)
- Author in Evaluation of novel pixel sensors for future tracking detectors
Zheng Li (Brookhaven National Laboratory)
- Co-author in The avalanche effect in operation of heavily irradiated silicon p-i-n detectors
Zheng Li (Brookhaven National Laboratory)
- Co-author in Predictions on charge collection efficiency in heavily irradiated Si detectors basing on the approach of active base region
Zheng Li (BNL)
- Author in Contributions of Electrons and Holes to Total Collected Charge in Heavily Irradiated Si Pad and Strip/Pixel Detectors: A Comparison Simulation Study
Gunnar Lindström (Hamburg University)
- Co-author in Charge collection and trapping effects in n-type and p-type epitaxial silicon diodes after proton irradiation
Gunnar Lindström (Hamburg University)
- Co-author in Prediction of the macroscopic "reverse annealing" using microscopic defect concentrations
Anna Macchiolo (Max-Planck-Institut fuer Physik-Unknown-Unknown)
- Author in Status of the Planar Pixel Production at CiS
Teppo Maeenpaeae (Helsinki Institute of Physics HIP)
- Author in Performance of irradiated MCz detectors in a test beam environment
Igor Mandic (Jožef Stefan Institute)
- Author in Online Radiation Dose Measurement System for ATLAS experiment
Igor Mandić (Jožef Stefan Institute)
- Co-author in Determination of strip detector properties by using Edge-TCT
Jessica Metcalfe (Department of Physics and Astronomy-University of New Mexico-Unk)
- Author in Capacitance Measurements and Depletion Voltage for Annealed Fz and MCz Diodes
Marko Mikuž (Jožef Stefan Institute)
- Co-author in Determination of strip detector properties by using Edge-TCT
Mercedes Minano Moya (Instituto de Fisica Corpuscular (IFIC) UV-CSIC)
- Author in Neutron irradiation for p-type sensors. Detector characterization with ALIBAVA system
Th. Müller (IEKP, UNI-Karlsruhe (TH))
- Co-author in TCT-Measurements of mixed irradiated Magentic Czochralski Diodes in the SLHC-Scenario
Ulrich Parzefall (Freiburg University)
- Author in Welcome to the 14th RD50 Workshop
Ioana Pintilie (NIMP, Bucharest, Romania and Hamburg University)
- Co-author in Prediction of the macroscopic "reverse annealing" using microscopic defect concentrations
Jyrki Raisanen (University of Helsinki)
- Co-author in Carrier lifetime variations in MCZ Si during irradiation by 3 - 8 MeV protons at temperatures in the range of 40 -300 K
Hartmut Sadrozinski (SCIPP, UC santa Cruz)
- Author in Anneling of Charge Collection in Strip sensors and the Depletion Voltage
Nadezda Safonova (Saint-Petersburg Electrotechnical University “LETI”)
- Co-author in Predictions on charge collection efficiency in heavily irradiated Si detectors basing on the approach of active base region
Pooja Saxena (Research Scholar)
- Author in Simulation study for improving the breakdown voltage of Si sensors for use in High Energy Physics (HEP) Experiments
Monica Scaringella (University of Florence)
- Author in TSC studies on MCz silicon pad detectors irradiated with neutrons
Michael Schneider (University Karlsruhe)
- Author in Measurements of lorentzangle in highly irradiated silicon-strip-detectors
Sally Seidel (University of New Mexico)
- Co-author in Capacitance Measurements and Depletion Voltage for Annealed Fz and MCz Diodes
Jennifer Ann Sibille (University of Kansas-Unknown-Unknown)
- Author in Sensor R&D for an upgrade of the CMS pixel barrel
Jennifer Ann Sibille
- Author in Sensor R&D for an upgrade of the CMS pixel barrel
Urmila Soldevila
- Author in Neutron irradiation for p-type sensors. Detector characterization with ALIBAVA system
Ajay Kumar Srivastava (UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un)
- Author in Effect of microscopic defects in n-type irradiated MCz silicon detectors: Impact on macroscopic parameters
Univ. of New Mexico gang UC Santa Cruz Gang (ATLAS Upgrade)
- Co-author in Anneling of Charge Collection in Strip sensors and the Depletion Voltage
Aurimas Uleckas (Vilnius University)
- Co-author in Comparative study of the electric field dependent variations of carrier recombination and drift parameters in MCZ Si detectors irradiated by different fluences of neutrons
Aurimas Uleckas (Vilnius University)
- Co-author in Carrier lifetime variations in MCZ Si during irradiation by 3 - 8 MeV protons at temperatures in the range of 40 -300 K
Juozas Vaitkus (Vilnius University)
- Author in Carrier lifetime variations in MCZ Si during irradiation by 3 - 8 MeV protons at temperatures in the range of 40 -300 K
- Author in Comparative study of the electric field dependent variations of carrier recombination and drift parameters in MCZ Si detectors irradiated by different fluences of neutrons
Elena Verbitskaya (Ioffe Physical Technical Institute)
- Co-author in The avalanche effect in operation of heavily irradiated silicon p-i-n detectors
Elena Verbitskaya (Ioffe Physical Technical Inst.)
- Author in Predictions on charge collection efficiency in heavily irradiated Si detectors basing on the approach of active base region
Andrei Zabrodskii (Ioffe Physical Technical Inst.)
- Co-author in Predictions on charge collection efficiency in heavily irradiated Si detectors basing on the approach of active base region
Ernestas Žąsinas (Vilnius University)
- Co-author in Comparative study of the electric field dependent variations of carrier recombination and drift parameters in MCZ Si detectors irradiated by different fluences of neutrons
Marko Zavrtanik (Jožef Stefan Institute)
- Co-author in Determination of strip detector properties by using Edge-TCT
Jaroslaw Zelazko (Institute of Electronic Materials Technology)
- Co-author in Annealing induced evolution of defect centers in epitaxial silicon irradiated with high proton fluences