Speaker
Michael Beimforde
(Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)
Description
We will present the results of first leakage-current and capacitance measurements of our 75 and 150 micron thin SOI production of n-in-p sensors before irradiation. They exhibit low dark currents and depletion voltages.
A comparison between the performance of the standard and a reduced guard ring structure will be shown.
Furthermore, the RD50 production of thin epitaxial n-in-p sensors, made by CIS, was characterized.
Infrared pictures reveal signs of break downs in the inner guard rings as well as in the active area close to the bias ring.
Primary author
Michael Beimforde
(Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)