14th RD50 Workshop

First characterizations of thin SOI and epitaxial n-in-p sensors

5 Jun 2009, 11:10

20m

Freiburg, Germany

Pixel sensors, 3D and SOI detectors, Radiation Monitoring

Speaker

Michael Beimforde (Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)

Description

We will present the results of first leakage-current and capacitance measurements of our 75 and 150 micron thin SOI production of n-in-p sensors before irradiation. They exhibit low dark currents and depletion voltages. A comparison between the performance of the standard and a reduced guard ring structure will be shown. Furthermore, the RD50 production of thin epitaxial n-in-p sensors, made by CIS, was characterized. Infrared pictures reveal signs of break downs in the inner guard rings as well as in the active area close to the bias ring.

Presentation materials

Slides

BeimfordeRD50FreiburgB.pdf