3–5 Jun 2009
Freiburg, Germany
Europe/Zurich timezone

Can we claim multiplication effects in irradiated silicon?

4 Jun 2009, 11:15
20m
Freiburg, Germany

Freiburg, Germany

Speaker

Gianluigi Casse (University of Liverpool)

Description

New measurements to very high voltage are here shown that can give more support to the appearence of charge carrier multiplication effects in irradiated Micron silicon microstrip detectors

Primary authors

Anthony Affolder (University of Liverpool) Gianluigi Casse (University of Liverpool)

Presentation materials