Speaker
Jessica Metcalfe
(Department of Physics and Astronomy-University of New Mexico-Unk)
Description
We irradiated n and p-type Float Zone (FZ) and magnetic Czochralski (MCz) silicon diodes with protons up to 1.4 x 10^15 neq/cm2. The devices were annealed at 60 °C and measured after 10, 80, 1,000 and 10,000 minutes. Capacitance and leakage current measurements were performed at room temperature and the depletion voltage extracted. A comparison of the different device types will be presented.
Author
Jessica Metcalfe
(Department of Physics and Astronomy-University of New Mexico-Unk)
Co-authors
Martin Hoeferkamp
(University of New Mexico)
Prof.
Sally Seidel
(University of New Mexico)
