Speaker
Dr
Ajay Kumar Srivastava
(UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un)
Description
In order to study the effect of microscopic defects on macroscopic detector parameters, we have used synopsis T-CAD device simulator for four-level numerical modeling of radiation induced deep level traps using parameters obtained from experimental measurements.
The resulting analysis techniques has been validated and calibrated by means of detailed comparison of the simulation with experimental measurements carried out on irradiated samples.
Summary
In order to study the effect of microscopic defects on macroscopic detector parameters, we have used synopsis T-CAD device simulator for four-level numerical modeling of radiation induced deep level traps using parameters obtained from experimental measurements.
The resulting analysis techniques has been validated and calibrated by means of detailed comparison of the simulation with experimental measurements carried out on irradiated samples.
Author
Dr
Ajay Kumar Srivastava
(UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un)
Co-authors
Dr
Doris Eckstein
(UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un)
Dr
Eckhart Fretwurst
(UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un)
Prof.
Robert Klanner
(UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un)
