Speaker
Vladimir Khomenkov
(Hamburg University)
Description
For CV/IV characterization of irradiated silicon detectors a standard temperature of 20°C and frequency of 10 kHz are adopted. However, at high irradiation level it is necessary to perform measurements at lower temperature. The obtained values Vfd and Id depend on the temperature and frequency, as well as on material and radiation type and the fluence.
To study this dependence CV/IV measurements in the temperature range from -10°C to 20°C and in the frequency range from 100 Hz to 100 kHz, as well as charge collection measurements were performed for epitaxial and MCz silicon diodes after irradiation with 24 GeV/c protons and reactor neutrons of different fluences.
Author
Vladimir Khomenkov
(Hamburg University)
Co-authors
Doris Eckstein
(Hamburg University)
Eckhart Fretwurst
(Hamburg University)
