Alexandra Junkes
(Hamburg University)
04/06/2009, 14:45
Isothermal annealing studies were carried out at 80 °C on 75 um thick standard and oxygen enriched Epitaxial (EPI) material, irradiated with 1 MeV neutron fluences of 2E14 n/cm2 and 1E15 n/cm2. Depletion voltage and leakage current were obtained by CV and IV measurements while defect concentrations were measured by means of Thermally Stimulated Current technique (TSC). The microscopic results...
Pawel Kaminski
(Institute of Electronic Materials Technology)
04/06/2009, 15:05
High-resolution photoinduced transient spectroscopy (HRPITS) has been used to studying the effect of isochronal annealing temperature on the properties defect centers in epitaxial silicon exposed to irradiation of 24 GeV/c protons with fluences ranging from 5x10^15 to 1.6x10^16cm^-2. The defect levels for standard and oxygenated epilayers have been compared. The main decrease in the...
Monica Scaringella
(University of Florence)
04/06/2009, 15:55
We report on the investigation of the radiation damage induced by neutron irradiation on MCz silicon pad detectors by TSC technique.
Prof.
Juozas Vaitkus
(Vilnius University)
04/06/2009, 16:15
Simultaneous measurements of the characteristics of photoconductivity transients, TOF, SCD (TCT) and SCLC by using various regimes of the surface and bulk excitation as well as current transient differential and integral registration regimes have been performed to clarify the electric field and neutron fluence dependent variations of carrier recombination and drift parameters in pad-detectors...
Dr
Ajay Kumar Srivastava
(UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un)
04/06/2009, 16:35
In order to study the effect of microscopic defects on macroscopic detector parameters, we have used synopsis T-CAD device simulator for four-level numerical modeling of radiation induced deep level traps using parameters obtained from experimental measurements.
The resulting analysis techniques has been validated and calibrated by means of detailed comparison of the simulation with...
Prof.
Juozas Vaitkus
(Vilnius University)
04/06/2009, 16:55
Variations of carrier recombination lifetime, linearly dependent on radiation induced defects density, have been in situ examined during irradiations by stopped and penetrative protons in MCZ Si wafers of 350 m thickness. Irradiations and in situ lifetime measurements were performed at different stabilized temperatures in the range of 40 -300 K. Registration of the averaged carrier decay...
