Jessica Metcalfe
(Department of Physics and Astronomy-University of New Mexico-Unk)
03/06/2009, 13:50
We irradiated n and p-type Float Zone (FZ) and magnetic Czochralski (MCz) silicon diodes with protons up to 1.4 x 10^15 neq/cm2. The devices were annealed at 60 °C and measured after 10, 80, 1,000 and 10,000 minutes. Capacitance and leakage current measurements were performed at room temperature and the depletion voltage extracted. A comparison of the different device types will be presented.
Katharina Kaska
(Technische Universitaet Wien)
03/06/2009, 14:10
Vladimir Khomenkov
(Hamburg University)
03/06/2009, 14:30
For CV/IV characterization of irradiated silicon detectors a standard temperature of 20°C and frequency of 10 kHz are adopted. However, at high irradiation level it is necessary to perform measurements at lower temperature. The obtained values Vfd and Id depend on the temperature and frequency, as well as on material and radiation type and the fluence.
To study this dependence CV/IV...
Robert Eber
(IEKP, UNI-Karlsruhe (TH))
03/06/2009, 14:50
Magnetic Czochralski Diodes both n-type and p-type of 300um thickness were irradiated with protons and neutrons to fluences corresponding to different Radii in the CMS-Tracker. IV- and CV-Measurements were performed to study the depletion behaviour of diodes with increasing current. Measurements with a TCT-Setup with red and infrared laser light are in progress to extract trapping times and...
Joern Lange
(Hamburg University)
03/06/2009, 15:10
Epitaxial silicon pad diodes of p-type (150 µm, ST material) and n-type (75 µm, 100 µm, 150 µm, both ST and DO) material have been investigated after 24 GeV/c proton irradiation at CERN PS. Time-resolved TCT measurements with 670 nm laser light (front injection) were performed for 150 µm thick diodes and thus the effective trapping time constants for electrons (n-type) and holes (p-type) could...
Gregor Kramberger
(Jozef Stefan Institute)
03/06/2009, 16:00
Transient Current Technique (TCT) was used to evaluate p-type silicon micro-strip detectors. A pulsed IR laser focused to a spot of to 6 μm illuminated the detector edge so that the beam was parallel with the surface and perpendicular to the strips. In that way electron hole pairs were created at known depth in the detector. Scans over the entire detector thickness with 0.5 μm resolution were...
Elena Verbitskaya
(Ioffe Physical Technical Inst.)
03/06/2009, 16:40
The approach of an active base with a non-zero electric field in heavily irradiated Si detectors is further developed for estimations of the collected charge up to the fluences of super-LHC range (10^16 cm^-2). The steady-state electric field in heavily irradiated detector has double peak shape with two maxima and the base region in between, in which the electric field is about few kV/cm....
Jasu Haerkoenen
(Helsinki Institute of Physics HIP)
03/06/2009, 17:20
Jennifer Ann Sibille,
Jennifer Ann Sibille
(University of Kansas-Unknown-Unknown)
03/06/2009, 17:40
Eckhart Fretwurst
(Hamburg University),
Gregor Kramberger
(Jozef Stefan Institute)
03/06/2009, 18:00
