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14th RD50 Workshop

3–5 Jun 2009
Freiburg, Germany
Europe/Zurich timezone

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Session

Pad Detector Characterization and Defect Engineering

3 Jun 2009, 13:50
Freiburg, Germany

Freiburg, Germany

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  1. 14. Capacitance Measurements and Depletion Voltage for Annealed Fz and MCz Diodes
    Jessica Metcalfe (Department of Physics and Astronomy-University of New Mexico-Unk)
    03/06/2009, 13:50
    We irradiated n and p-type Float Zone (FZ) and magnetic Czochralski (MCz) silicon diodes with protons up to 1.4 x 10^15 neq/cm2. The devices were annealed at 60 °C and measured after 10, 80, 1,000 and 10,000 minutes. Capacitance and leakage current measurements were performed at room temperature and the depletion voltage extracted. A comparison of the different device types will be presented.
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  2. 28. Determination of depletion voltage from CV, IV and CCE measurements on Pad Detectors
    Katharina Kaska (Technische Universitaet Wien)
    03/06/2009, 14:10
  3. 16. Electrical Characterization of Irradiated Silicon Diodes at Different Temperature
    Vladimir Khomenkov (Hamburg University)
    03/06/2009, 14:30
    For CV/IV characterization of irradiated silicon detectors a standard temperature of 20°C and frequency of 10 kHz are adopted. However, at high irradiation level it is necessary to perform measurements at lower temperature. The obtained values Vfd and Id depend on the temperature and frequency, as well as on material and radiation type and the fluence. To study this dependence CV/IV...
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  4. 15. TCT-Measurements of mixed irradiated Magentic Czochralski Diodes in the SLHC-Scenario
    Robert Eber (IEKP, UNI-Karlsruhe (TH))
    03/06/2009, 14:50
    Magnetic Czochralski Diodes both n-type and p-type of 300um thickness were irradiated with protons and neutrons to fluences corresponding to different Radii in the CMS-Tracker. IV- and CV-Measurements were performed to study the depletion behaviour of diodes with increasing current. Measurements with a TCT-Setup with red and infrared laser light are in progress to extract trapping times and...
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  5. 24. Charge collection and trapping effects in n-type and p-type epitaxial silicon diodes after proton irradiation
    Joern Lange (Hamburg University)
    03/06/2009, 15:10
    Epitaxial silicon pad diodes of p-type (150 µm, ST material) and n-type (75 µm, 100 µm, 150 µm, both ST and DO) material have been investigated after 24 GeV/c proton irradiation at CERN PS. Time-resolved TCT measurements with 670 nm laser light (front injection) were performed for 150 µm thick diodes and thus the effective trapping time constants for electrons (n-type) and holes (p-type) could...
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  6. 5. Determination of strip detector properties by using Edge-TCT
    Gregor Kramberger (Jozef Stefan Institute)
    03/06/2009, 16:00
    Transient Current Technique (TCT) was used to evaluate p-type silicon micro-strip detectors. A pulsed IR laser focused to a spot of to 6 μm illuminated the detector edge so that the beam was parallel with the surface and perpendicular to the strips. In that way electron hole pairs were created at known depth in the detector. Scans over the entire detector thickness with 0.5 μm resolution were...
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  7. 29. New TCT setups at CERN and Louvain
    Manuel Fahrer (CERN)
    03/06/2009, 16:20
    New strip sensitive TCT & CCE setups are under construction in colaboration between CERN and Louvain. Mechanics and electronics are realized in a twin solution in both test stations. Focused red laser beam will be used for standard and strip sensitive TCT. Sr 90 source and IR laser will be used for calibration and fast CCE. A fix optical fiber setup with splitters and shutters avoids...
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  8. 11. Predictions on charge collection efficiency in heavily irradiated Si detectors basing on the approach of active base region
    Elena Verbitskaya (Ioffe Physical Technical Inst.)
    03/06/2009, 16:40
    The approach of an active base with a non-zero electric field in heavily irradiated Si detectors is further developed for estimations of the collected charge up to the fluences of super-LHC range (10^16 cm^-2). The steady-state electric field in heavily irradiated detector has double peak shape with two maxima and the base region in between, in which the electric field is about few kV/cm....
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  9. 2. Contributions of Electrons and Holes to Total Collected Charge in Heavily Irradiated Si Pad and Strip/Pixel Detectors: A Comparison Simulation Study
    Zheng Li (BNL)
    03/06/2009, 17:00
    A simplified approach to compare quantitatively the contributions of electrons and holes to the total collected charge in heavily irradiated Si pad detectors and strip/pixel detectors has been developed in this study. By applying a step function to approximate the weighting field and a step function to approximate the linear- and/or double junction- electric field, in the detector, one can...
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  10. 39. Bias on-off proton irradiation results on MCz-Si and Fz-si detectors
    Jasu Haerkoenen (Helsinki Institute of Physics HIP)
    03/06/2009, 17:20
  11. 9. Sensor R&D for an upgrade of the CMS pixel barrel
    Jennifer Ann Sibille, Jennifer Ann Sibille (University of Kansas-Unknown-Unknown)
    03/06/2009, 17:40
  12. 30. Discussion Session
    Eckhart Fretwurst (Hamburg University), Gregor Kramberger (Jozef Stefan Institute)
    03/06/2009, 18:00
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