11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan

Correlation between Radiation Damage and Electrical Characteristics of the Proton-irradiated Silicon PN Diode

10 Dec 2017, 20:42

1m

Conference Center (Okinawa Institute of Science and Technology Graduate University (OIST))

POSTER Radiation damage and radiation tolerant materials POSTER

Speaker

Dr Sy Minh Tuan HOANG (Duy Tan University)

Description

The present study describes the correlation between radiation damages and electrical properties of the PN diode after irradiation the energy proton. The PN diodes were irradiated at difference irradiation energies of 5.26, 7.2, and 8.67 MeV with the proton doses of 1 x 10¹⁰, 1 x 10¹¹, and 1 x 10¹² cm^-2. The final 3D distribution of the ions and all kinetic phenomena associated with the ion energy loss, such vacancies, sputtering, ionization, and phonon production can be estimated by using the calculation packages (SDTrimSP and IM3D). From the findings, it is observed that the penetration of protons into the PN diode leads to the production of lattice defects in the form of vacancies, defect clusters and dislocations. As to the ionization effects in the PN diode, the total ionizing dose and single event effects were also calculated. In practical terms, the capacitance–voltage and current–voltage characteristics of the PN diode after irradiation has been measured to deduce the correlation between the damage creations and the electrical properties.

Keywords: Radiation damage, SDTrimSP, Proton, Semiconductor device.