11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan

Beam test results of a monolithic pixel detector designed in SOI 200nm technology.

14 Dec 2017, 16:30

20m

Conference Center (Okinawa Institute of Science and Technology Graduate University (OIST))

ORAL SOI detectors Session14

Speaker

Szymon Bugiel (AGH University of Science and Technology (PL))

Description

For tracking detectors at future linear colliders a high-precision position measurement is required. In order to limit multiple scattering, a detector with low material budget id advantageous. Monolithic structures represent a promising solution for such detectors. This work presents the test beam results of pixel detectors fabricated in Lapis $200nm$ Silicon-On-Insulator (SOI) CMOS technology. The SOI prototypes were tested in Summer 2017 - at CERN's SPS H6 beam line with 120 GeV pion beams using a Timepix3 telescope as a reference.
Two wafer types with different resistivity and detector thickness were tested: Floating Zone type n and Double SOI type p. Moreover, the measured matrix consists of two different pixel types, one based on charge preamplifier architecture and one based on source-followers. The data was analysed in terms of spatial resolution and detector efficiency. The analysis chain included pedestal and noise calculation, different cluster reconstruction algorithms, as well as alignment and eta correction. The preliminary results give a resolution of about 2.5 $\mu m$ for 30 $\mu m$ square pixel pitch.

Presentation materials

2017_HSTD11_SzymonBugiel.pdf