11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan

A SOI Pixel Detector Using Pinned Depleted Diode Structure For High-Energy-Resolution X-ray Imaging and High-Sensitivity NIR Imaging

12 Dec 2017, 12:10

20m

Conference Center (Okinawa Institute of Science and Technology Graduate University (OIST))

ORAL SOI detectors Session6

Speaker

Shoji Kawahito (Shizuoka University)

Description

This paper presents a SOI pixel(SOIPIX) detector using pinned depleted diode structure suitable for high-energy-resolution X-ray imaging and high-sensitivity NIR imaging. The pinned depleted diode(PDD) structure greatly reduces the R-G dark current generation at the SOI back-gate and the read noise thanks to the very small sensing capacitance and improves the charge correction efficiency. This pixel technology is also useful for high-sensitivity near-infrared imaging with fully-depleted substrate, particularly for time-of-flight(TOF) range imaging. An experimental chip shows an excellent pixel performance on low dark current, low noise, and resulting high energy resolution in X-ray imaging. Range measurement is also carried out using the proposed TOF sensor with the PDD-SOIPIX technology.

Authors: Shoji Kawahito (Shizuoka University), H. Kamehama, S. Shrestha, K. Yasutomi, N. Teranishi(Shizuoka Univ.), T. G. Tsuru (Kyoto Univ.), A. Takeda (Miyazaki Univ.), I. Kurachi (KEK) and Y. Arai(KEK)

Presentation materials

SOIPIX2017HSTD11_kawahito.pdf