Session

Session3

11 Dec 2017, 14:00
Conference Center (Okinawa Institute of Science and Technology Graduate University (OIST))

Conference Center

Okinawa Institute of Science and Technology Graduate University (OIST)

OIST, Onna, Okinawa 904-0495, Japan

Conveners

Session3

  • Philip Patrick Allport (University of Birmingham (UK))

Presentation materials

There are no materials yet.

  1. Mr Shintaro Kamada (HAMAMATSU PHOTONICS K.K)
    11/12/2017, 14:00
    Technologies
    ORAL

    We have been developing various types of Si detectors for HEP(High Energy Physics) Experiments.
    Hamamatsu SSD(Silicon Strip Detectors) has been used as a tracking detector in many collider experiments [ATLAS, CMS, BELLE, etc.] and space experiments [ FGST(GLAST), AGILE, etc.].
    Hamamatsu APD(Avalanche Photo Diodes) is used as a photo detector of PWO4 scintillator in the CMS electromagnetic...

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  2. Johannes Hacker (Infineon Technologies Austria AG)
    11/12/2017, 14:30
    Strip sensors
    ORAL

    Infineon Technologies is developping single-sided AC-coupled Si-Strip-Sensors for the Phase-II-Upgrades of both ATLAS and CMS for the HL-LHC. The status and outlook of recent sensor-productions will be presented.

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  3. Nicolo Cartiglia (INFN Torino (IT))
    11/12/2017, 14:50
    New ideas and future applications
    ORAL

    In this contribution, I will review the growing interest in implementing large area fast timing detectors with a time resolution of 30-50 ps based on low gain avalanche detectors. This interest is spurred as timing information is a very effective tool in pile-up rejection. Large scale high-precision timing detectors face formidable challenges in almost every aspect: sensors performance,...

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  4. Prof. Yasuo Arai (High Energy Accelerator Research Organization (JP))
    11/12/2017, 15:20
    SOI detectors
    ORAL

    Silicon-On-Insulator (SOI) technology is considered to have the most suitable structure for a monolithic pixel detector. It achieved many important performance: less than 1 micron tracking resolution, good energy resolution with 10 electron noise level, radiation hardness of more than 100 kGy(Si), small layout size with PMOS and NMOS active merge, etc.
    Overview of the SOI pixel process and...

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