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11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan

10–15 Dec 2017
Okinawa Institute of Science and Technology Graduate University (OIST)
Japan timezone

Session

Session9

13 Dec 2017, 09:00
Conference Center (Okinawa Institute of Science and Technology Graduate University (OIST))

Conference Center

Okinawa Institute of Science and Technology Graduate University (OIST)

OIST, Onna, Okinawa 904-0495, Japan

Conveners

Session9

  • Angelo Rivetti (Universita e INFN Torino (IT))

Presentation materials

There are no materials yet.

  1. 61. CMOS technologies and power distribution components for HL-LHC: radiation strikes back
    Federico Faccio (CERN)
    13/12/2017, 09:00
    Technologies
    ORAL

    The first decade of the century was characterized by a very successful development of radiation-tolerant ASICs in a commercial quarter micron CMOS process, and very promising measurements on commercial-grade 130nm technologies. A straightforward path for the design and integration of ASICs tolerant to ultra-high radiation levels seemed to be wide open. This was without counting on the...

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  2. 84. INFN-FBK developments in 3D sensors for High Luminosity LHC
    Hideyuki Oide (INFN-Genova)
    13/12/2017, 09:30
    Pixel sensors for tracking
    ORAL

    3D sensors are a promising option for the innermost pixel layers at the High
    Luminosity LHC. However, the required very high hit-rate capabilities,
    increased pixel granularity, extreme radiation hardness, and reduced
    material budget call for a device downscale as compared to existing 3D
    sensors, involving smaller pitch (e.g., 50×50 or 25×100 µm2 ), shorter
    inter-electrode spacing (~30 µm),...

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  3. 124. Superior radiation hardness of 3D pixel sensors up to HL-LHC fluences and beyond
    Joern Lange (IFAE Barcelona)
    13/12/2017, 09:50
    Radiation damage and radiation tolerant materials
    ORAL

    3D silicon detectors, with cylindrical electrodes that penetrate the sensor bulk perpendicularly to the surface, present a radiation-hard sensor technology. Due to a reduced electrode distance, trapping at radiation-induced defects is less and the operational voltage and power dissipation after heavy irradiation are significantly lower than for planar devices. During the last years, the 3D...

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  4. 90. Status and road map of hybridization technologies relevant to future pixel detectors
    Makoto Motoyoshi (Tohoku-MincroTec Co., Ltd (T-Micro))
    13/12/2017, 10:10
    Technologies
    ORAL

    A 3D-IC is an effective solution for reducing the manufacturing costs of advanced 2D LSI while ensuring equivalent device performance and functionalities. This technology allows for a new device architecture of stacked detectors/sensor devices with a small dead sensor area and facilitates hyper-parallel data processing. In pixel sensors and detectors, many transistors must be accommodated...

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