Conveners
Session9
- Angelo Rivetti (Universita e INFN Torino (IT))
The first decade of the century was characterized by a very successful development of radiation-tolerant ASICs in a commercial quarter micron CMOS process, and very promising measurements on commercial-grade 130nm technologies. A straightforward path for the design and integration of ASICs tolerant to ultra-high radiation levels seemed to be wide open. This was without counting on the...
3D sensors are a promising option for the innermost pixel layers at the High
Luminosity LHC. However, the required very high hit-rate capabilities,
increased pixel granularity, extreme radiation hardness, and reduced
material budget call for a device downscale as compared to existing 3D
sensors, involving smaller pitch (e.g., 50×50 or 25×100 µm2 ), shorter
inter-electrode spacing (~30 µm),...
3D silicon detectors, with cylindrical electrodes that penetrate the sensor bulk perpendicularly to the surface, present a radiation-hard sensor technology. Due to a reduced electrode distance, trapping at radiation-induced defects is less and the operational voltage and power dissipation after heavy irradiation are significantly lower than for planar devices. During the last years, the 3D...
A 3D-IC is an effective solution for reducing the manufacturing costs of advanced 2D LSI while ensuring equivalent device performance and functionalities. This technology allows for a new device architecture of stacked detectors/sensor devices with a small dead sensor area and facilitates hyper-parallel data processing. In pixel sensors and detectors, many transistors must be accommodated...
