Conveners
Session11
- Artur Apresyan (Fermi National Accelerator Lab. (US))
Timing Resolution Measurements
of Ultra-Fast Silicon Detectors vs. Temperature, Fluence, Thickness
Hartmut F.W. Sadrozinski
representing the
UFSD Collaboration (UC Santa Cruz, INFN Torino, IJS Ljubljana, CNM Barcelona, LPNHE Paris)
We report on the performance of UFSD (Ultra-Fast Silicon Detectors) from two vendors CNM (LGAD thickness 45μm) and HPK (LGAD thickness 50 and 80μm). UFSD are...
In this contribution, we present new developments in the production of Ultra-Fast Silicon Detectors at the Fondazione Bruno Kessler (FBK, Trento, Italy).
Ultra-Fast Silicon Detectors (UFSD) are innovative silicon sensors optimised for timing measurements based on the Low-Gain Avalanche Diode design. UFSD recently obtained a time resolution of $\sigma_t$ ~ 30 ps in beam tests and are now being...
Low-gain avalanche detectors (LGADs) are attracted for fast response for realizing a 4D tracker in future experiment and for possible other applications. We have fabricated LGAD diodes and strip sensors and evaluated their characteristics including such as response to LEDs with various wavelengths/infrared laser, radiation hardness to proton and neutron irradiations. We noticed that a...
Low Gain Avalanche Detectors (LGAD), are customised Avalanche Photodiodes (APD) to obtain a high electric field region confined close to the reversed junction. As a consequence, only the electrons generated when an incident particle passes through the detector start the impact ionization. Thus multiply the charge collected by readout electronics without increasing the noise in the signal. Due...
