Speaker
Description
Development of novel electrical insulation is vital for successful fabrication of (S)-Insulator (I)-Superconductor(S) Josephson junctions and related devices that have potential applications in quantum computing, superconducting quantum interference devices (SQUIDs), single-electron transistors, remote sensors, and terahertz frequency (THz) signal generating and detecting devices. YBa2Cu3O7 (YBCO) based Superconductor (S)-Insulator (I)-Superconductor(S) Josephson junctions could operate at liquid nitrogen temperature and may have IcRn products (with Ic the junction critical current and Rn the normal resistance) at least one order of magnitude larger than in the low temperature superconductor based junctions. However, the development of these junctions has been a challenge for many years as the thickness of the insulating layer (I) in the junction is required to be only about a few nanometers thick and also provide high electrical resistivity. PBCO is a candidate for the fabrication of YBCO based Josephson junction because of its similar lattice structure, similar growth conditions, and identical thermal expansion coefficients. However, its electrical resistivity is still low to provide sufficient electrical insulation in the device. Here, we report growth and low temperature electrical transport studies of a new electrical insulation material, Fe doped (110)-oriented PBCO thin films.