9–13 Jul 2017
Monona Terrace Community and Convention Center
US/Central timezone

Competition between the significant scale lengths influing on the transport phenomena at very low temperature in InP semiconductor

11 Jul 2017, 13:00
2h
Exhibit Hall AB

Exhibit Hall AB

Speaker

Prof. ABDELHAMID EL KAAOUACHI (aFaculty of Sciences IbnZohr of Agadir, Physics department, BP 8106 8000 Agadir, Morocco)

Description

In this work, we investigate the Metal-Insulator Transition (MIT) at very low temperature in presence of magnetic field using the competition between the relevant scale lengths determining the behavior of the electrical conductivity with low temperature in the both sides of the MIT. The MIT is induced by applying high magnetic field in 3D InP semiconductor sample. The scale lengths taking in account in this investigation are: the correlation length, the localization length, the interaction length and the hopping length.

Authors

Prof. ABDELHAMID EL KAAOUACHI (aFaculty of Sciences IbnZohr of Agadir, Physics department, BP 8106 8000 Agadir, Morocco) Dr HASSAN EL IDRISSI (bFST of Mohammedia, EEATI Laboratory, Mohammedia, Morocco) Dr MOHAMED ERRAI (aFaculty of Sciences IbnZohr of Agadir, Physics department, BP 8106 8000 Agadir, Morocco)

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