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CEC-ICMC 2017 - Abstracts, Timetable and Presentations

9–13 Jul 2017
Monona Terrace Community and Convention Center
US/Central timezone

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Session

M4OrA - Focused Session: Cryogenic Microelectronics & Materials III

M4OrA
13 Jul 2017, 09:30
Lecture Hall

Lecture Hall

Conveners

M4OrA - Focused Session: Cryogenic Microelectronics & Materials III

  • Deepnarayan Gupta (HYPRES)
  • Timothy Haugan (U.S. Air Force Research Laboratory)

Presentation materials

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  1. 125. [Invited] Cryogenic Sensor and Cryorefrigerator Development in the Quantum Sensors Group at NIST
    Joel Ullom (NIST)
    13/07/2017, 09:30
    Invited Oral Presentation

    The technical capabilities of cryogenic sensors and their scope of application continue to grow. In the Quantum Sensors Group at NIST, we are developing both transition-edge sensors (TESs) and microwave kinetic inductance detectors (MKIDs) for a broad range of applications including x-ray materials analysis, nuclear security, terrestrial imaging, and astrophysics. We describe a subset of...

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  2. 563. [Invited] Prototyping Extensible Quantum Computing Architectures
    Prof. Matteo Mariantoni (University of Waterloo), Mr Thomas G. McConkey (University of Waterloo)
    13/07/2017, 10:00
    Invited Oral Presentation

    Quantum computing architectures with ten or more quantum bits (qubits) have been implemented using trapped ions and superconducting devices. The next milestone in the quest for a quantum computer is the realization of quantum error correction codes. Such codes will require a very large number of qubits that must be controlled and measured by means of classical electronics. One architectural...

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  3. 577. [Invited] Ultra-Low-Power Silicon Germanium Cryogenic Low Noise Amplifiers
    Joseph Bardin (University of Massachusetts Amherst)
    13/07/2017, 10:30
    Invited Oral Presentation

    Cryogenic low noise amplifiers (LNAs) find regular use in a wide variety of applications ranging from radio astronomy to quantum computing. When operating at physical temperatures below 20$\,$K, amplifiers based upon InP high electron mobility transistors (HEMTs) and SiGe heterojunction bipolar transistors (HBTs) regularly achieve noise temperatures about an order of magnitude above the...

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