Speaker
Ashutosh Bhardwaj
(University of Delhi (IN))
Description
The extremely harsh radiation environment of the future trackers necessitates the upgrade of the existing silicon detector technologies. The LGAD detectors, based on their internal charge multiplication mechanism, have attracted a lot of interest in the silicon detector community. However, it has been reported that a rapid decrease in the LGAD gain with irradiation is limiting these devices as the possible detector candidates for future experiments. In this work, it is demonstrated, through the TCAD simulation results, that by tuning certain design parameters, LGAD can be made to sustain the high radiation environment.
Primary author
Geetika Jain
(University of Delhi (IN))
Co-author
Ranjeet Dalal
(University of Delhi)
