21-23 November 2016
CERN
Europe/Zurich timezone

LGAD design for harsh radiation environments using TCAD simulations.

22 Nov 2016, 14:40
20m
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

6-2-024
120
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Speaker

Ashutosh Bhardwaj (University of Delhi (IN))

Description

The extremely harsh radiation environment of the future trackers necessitates the upgrade of the existing silicon detector technologies. The LGAD detectors, based on their internal charge multiplication mechanism, have attracted a lot of interest in the silicon detector community. However, it has been reported that a rapid decrease in the LGAD gain with irradiation is limiting these devices as the possible detector candidates for future experiments. In this work, it is demonstrated, through the TCAD simulation results, that by tuning certain design parameters, LGAD can be made to sustain the high radiation environment.

Primary author

Geetika Jain (University of Delhi (IN))

Co-author

Ranjeet Dalal (University of Delhi)

Presentation Materials