Name: 29th RD50 Workshop (CERN)
Start: 2016-11-21T08:30:00+01:00
End: 2016-11-23T14:00:00+01:00
Location: CERN

29th RD50 Workshop (CERN)

from Monday 21 November 2016 (08:30) to Wednesday 23 November 2016 (14:00)

Monday 21 November 2016
08:30
08:30 - 09:30
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

08:30 RD50 CMOS project - Gianluigi Casse (University of Liverpool (GB))
09:30
09:30 - 10:15
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

10:00 Workshop opening - Michael Moll (CERN)
10:15
10:15 - 11:45
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

10:15 New results of measurements with irradiated CMOS detectors in Ljubljana - Igor Mandic (Jozef Stefan Institute (SI))

10:35 Two Photon edge-TCT measurements of a neutron irradiated HVCMOS - Marcos Fernandez Garcia (Universidad de Cantabria (ES))

10:55 Edge-TCT studies of irradiated HV-CMOS sensors and first test beam results with monolithic H35demo chips - Stefano Terzo (IFAE Barcelona (ES))

11:15 Discussion session: CMOS & RD50 CMOS project - Gianluigi Casse (University of Liverpool (GB))
11:45
11:45 - 17:00
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

11:45 Ion irradiation and semiconductor detector characterization at the Centro Nacional de Aceleradores [MONDAY] - Javier Garcia Lopez (University of Seville)

12:05 Studies of small-pitch CNM 3D detectors - Joern Lange (IFAE Barcelona)

14:00 Note on C-DLTS application for study of radiation damage produced by short range particles. V. Eremin, D. Mitina, E. Verbitskaya - Vladimir Eremin (Ioffe Institute)

14:20 Proton energy dependent damage to thin Silicon pad diodes - Elena Donegani (University of Hamburg)

14:40 TSC Spectra – Point- versus Cluster-Defects - Eckhart Fretwurst (II. Institut fuer Experimentalphysik)

15:00 Magnetoresistance in the irradiated Si microstrip type samples - Juozas Vaitkus (Vilnius University)

15:50 Defect centers in nitrogen-enriched high-resistivity n-type silicon induced by high-energy protons - Pawel Kaminski (Institute of Electronic Materials Technology (PL))

16:10 Impact of electron irradiation on N- and O-enriched FZ silicon p-in-n pad detectors - Kevin Lauer (CIS Institut fuer Mikrosensorik GmbH (DE))

16:30 Discussion on Defects and Materials - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
17:00

17:00 - 19:00
Room: 6/2-024 - BE Auditorium Meyrin
Tuesday 22 November 2016
09:00
09:00 - 14:00
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

09:00 Characterisation of HFS detectors - Sofia Otero Ugobono (CERN/Universidade de Santiago de Compostela (ES))

09:20 Neutron Induced Radiation Damage of KETEK SiPMs - Matteo Centis Vignali (Hamburg University (DE))

09:40 Measurements on 50um thick LGAD from CNM - Hartmut Sadrozinski (University of California,Santa Cruz (US))

10:00 Radition damage studies in LGAD detectors from recent CNM and FBK runs - Gregor Kramberger (Jozef Stefan Institute (SI))

10:20 Status of CNM technological developments on LGAD and future plans - Maria del Mar Carulla Areste (Instituto de Microelectronica de Barcelona IMB-CNM)

10:40 The new RD50 Logo - Michael Moll (CERN)

11:10 Laboratory measurement and progress in Low Gain Avalanche Diodes - Marco Ferrero (Universita e INFN Torino (IT))

11:30 Temperature dependence of the response of Ultra Fast Silicon Detectors - Roberto Mulargia (Universita e INFN Torino (IT))

11:50 Test beam and TCT characterization results of i-LGAD and Strip LGAD sensors - Ivan Vila Alvarez (Universidad de Cantabria (ES))

12:10 Studies of gain and time resolution of 50 µm LGADs before and after irradiation - Joern Lange (IFAE Barcelona)

12:30 Discussion: Detectors with Gain - Detectors for timing - Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (ES))
14:00
14:00 - 19:00
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

14:00 Physical limits on the inter-strip resistance for planar strip sensors - Vitaliy Fadeyev (University of California,Santa Cruz (US))

14:20 Calculation of the effective space charge profile of a detector using TRACS - Julio Calvo Pinto (CERN)

14:40 LGAD design for harsh radiation environments using TCAD simulations. - Ashutosh Bhardwaj (University of Delhi (IN))

15:00 Simulation of Low Gain Avalanche Detector characteristics based on the concept of negative feedback in irradiated silicon detectors with carrier impact ionization (Part II) - Elena Verbitskaya (Ioffe Institute)

15:20 Simulation of Dynamic Characteristics of GaN p-i-n Avalanche Diode Type Particle Detector - Juozas Vysniauskas (Vilnius University (LT))

16:10 TCAD simulations of p-bulk silicon sensors after a large range of fluences - Marco Bomben (Centre National de la Recherche Scientifique (FR))

16:30 Fitting the LGAD simulation - Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))

16:50 Insight into the behaviour of futuristic low bulk resistivity Si sensors using device simulation.

17:10 Validation strategy for the simulation of highly irradiated silicon pixel sensors - Joern Schwandt (Hamburg University (DE))

17:30 Discussion: Device Simulation & RD50 Simulation Working Group
19:30 Social Dinner
Social Dinner
19:30 - 22:30
Room: 6/2-024 - BE Auditorium Meyrin
Wednesday 23 November 2016
09:00
09:00 - 13:00
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

09:00 Study of prototype sensors for the LHCb Upstream Tracker Upgrade - Scott Edward Ely (Syracuse University (US))

09:20 Run II Radiation Damage Effects and Operation of the LHCb Vertex Locator - Agnieszka Oblakowska-Mucha (AGH University of Science and Technology (PL))

09:40 Charge collection and Lorentz angle measurement on ATLAS12 sensors - Eda Yildirim (Johannes-Gutenberg-Universitaet Mainz (DE))

10:00 Long Term Annealing of ATLAS12 Sensors - Leena Diehl (University of Freiburg)

10:20 Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction - Mikko Juntunen (Helsinki Institute of Physics)

11:10 Characterization of irradiated thin n-in-planar pixel and active edge sensors - Natascha Savic (Max-Planck-Institut fur Physik (DE))

11:30 Proposal for the organization of an RD50 project aimed at the realization of an Edge-less Device - Maurizio Boscardin (Unknown) Maurizio Boscardin (FBK Trento)

11:50 Common project proposal: Thin-film based silicon sensors - Daniel Muenstermann (Lancaster University (GB))

12:10 The RD50 database on measured data - Donato Creanza (Dipartimento Interateneo di Fisica & INFN - Bari) Donato Creanza (Universita e INFN, Bari (IT))

12:30 Discussion: LHC Experiments; New Technologies; Edgeless

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