29th RD50 Workshop (CERN)

Session

Defect and Material Characterization

21 Nov 2016, 11:45

6/2-024 - BE Auditorium Meyrin (CERN)

3. Ion irradiation and semiconductor detector characterization at the Centro Nacional de Aceleradores [MONDAY]

Javier Garcia Lopez (University of Seville)

21/11/2016, 11:45

The National Accelerator Center (CNA) is a user’s facility dedicated to multidisciplinary applications of particle accelerators. In this talk, the infrastructure available at CNA for Ion Irradiation and Characterization of Materials, based on a 3 MV tandem accelerator and a compact cyclotron for 18 MeV protons, will be briefly described. Recent activities carried out at CNA with potential...

33. Studies of small-pitch CNM 3D detectors

Joern Lange (IFAE Barcelona)

21/11/2016, 12:05

For the HL-LHC pixel detector upgrades, pixel sensors with small pixel size of 50x50 and 25x100 µm² are envisaged.
At CNM, a first run of small-pitch 3D sensors was produced, which are designed to be matched to existing front-end chips like the ATLAS FE-I4. Pixel detectors were bump-bonded and assembled at IFAE Barcelona and tested in the laboratory and beam tests at CERN before and after...

28. Note on C-DLTS application for study of radiation damage produced by short range particles. V. Eremin, D. Mitina, E. Verbitskaya

Dr Vladimir Eremin (Ioffe Institute)

21/11/2016, 14:00

Short range particles like alphas, low energy protons, ions, etc. are cost effective approaches for the damage production in silicon. The physics of capacitance DLTS application for study of such structures is discussed. The approach is illustrated by the results on silicon detectors irradiated by heavy ions.

32. Proton energy dependent damage to thin Silicon pad diodes

Elena Donegani (University of Hamburg)

21/11/2016, 14:20

This work deals with the bulk damage due to 23 MeV, 188 MeV and 23 GeV protons
to 200$\mu$m silicon pad sensors (bulk materials: FTH, MC or dd-FZ). I-V, C-V-f and
TSC measurements were performed at subsequent annealing steps.
Two challenges in performing TSC measurements will be pointed out: the first one
concerns the application of a forward current in the order of 1mA at the...

39. TSC Spectra – Point- versus Cluster-Defects

Eckhart Fretwurst (II. Institut fuer Experimentalphysik)

21/11/2016, 14:40

TSC Spectra – Point- versus Cluster-Defects
E. Fretwurst, E. Donegani, E. Garutti, R. Klanner
Institute for Experimental Physics, University of Hamburg

Abstract:
The analysis of TSC spectra of silicon diodes after irradiation with GeV protons or neutrons rely on the knowledge of the induced defects which can be either point-like or cluster-related defects. It was found that TSC signals which...

23. Magnetoresistance in the irradiated Si microstrip type samples

Juozas Vaitkus (Vilnius University)

21/11/2016, 15:00

The standard Si microstrip detector samples were irradiated to high fluence in TRIGA reactor.
The magnetoresistance was investigated at different temperature, and the preliminary results of mobility dependence was obtained. It was found a decrease of magnetoresistance mobility up to 640 cm2/sV @ room T in samples irradiated to 1e17 neutron/cm2 fluence. The mobility was near to the same in...

4. Defect centers in nitrogen-enriched high-resistivity n-type silicon induced by high-energy protons

Pawel Kaminski (Institute of Electronic Materials Technology (PL))

21/11/2016, 15:50

Radiation damage in n-type high-resistivity FZ silicon wafers with a nitrogen concentration of ~1.5E15 cm^-3 exposed to 23-MeV protons has been studied by using high-resolution photoinduced transient spectroscopy (HRPITS), infrared absorption (FTIR) and photoluminescence (PL) and measurements. In order to determine the evolution of the radiation defect structure with increasing the proton...

14. Impact of electron irradiation on N- and O-enriched FZ silicon p-in-n pad detectors

Kevin Lauer (CIS Institut fuer Mikrosensorik GmbH (DE))

21/11/2016, 16:10

Nitrogen and oxygen enriched FZ silicon was investigated with respect to the radiation hardness under electron irradiation. P-in-n pad detectors were fabricated on four groups of FZ silicon wafers (FZ, NFZ, DOFZ and DOPFZ). Group NFZ was enriched with nitrogen during crystal growth. The DOFZ and DOPFZ groups were enriched with oxygen by oxygen indiffusion during prolonged annealing. The DOPFZ...

31. Discussion on Defects and Materials

Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

21/11/2016, 16:30