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29th RD50 Workshop (CERN)

from Monday, November 21, 2016 (8:30 AM) to Wednesday, November 23, 2016 (2:00 PM)
CERN (6/2-024)

        : Sessions
    /     : Talks
        : Breaks
Nov 21, 2016
Nov 22, 2016
Nov 23, 2016
AM
8:30 AM
RD50 CMOS project & working group meeting (until 9:30 AM)
8:30 AM RD50 CMOS project - Gianluigi Casse (University of Liverpool (GB))  
9:30 AM
Registration and Workshop opening (until 10:15 AM)
9:30 AM --- Coffee and Workshop registration ---
10:00 AM Workshop opening - Michael Moll (CERN)  
10:15 AM
CMOS sensors (until 11:45 AM)
10:15 AM New results of measurements with irradiated CMOS detectors in Ljubljana - Igor Mandic (Jozef Stefan Institute (SI))  
10:35 AM Two Photon edge-TCT measurements of a neutron irradiated HVCMOS - Marcos Fernandez Garcia (Universidad de Cantabria (ES))  
10:55 AM Edge-TCT studies of irradiated HV-CMOS sensors and first test beam results with monolithic H35demo chips - Stefano Terzo (IFAE Barcelona (ES))  
11:15 AM Discussion session: CMOS & RD50 CMOS project - Gianluigi Casse (University of Liverpool (GB))  
11:45 AM
Defect and Material Characterization (until 5:00 PM)
11:45 AM Ion irradiation and semiconductor detector characterization at the Centro Nacional de Aceleradores [MONDAY] - Javier Garcia Lopez (University of Seville)  
12:05 PM Studies of small-pitch CNM 3D detectors - Joern Lange (IFAE Barcelona)  
12:25 PM --- Lunch ---
2:00 PM Note on C-DLTS application for study of radiation damage produced by short range particles. V. Eremin, D. Mitina, E. Verbitskaya - Dr Vladimir Eremin (Ioffe Institute)  
2:20 PM Proton energy dependent damage to thin Silicon pad diodes - Elena Donegani (University of Hamburg)  
2:40 PM TSC Spectra – Point- versus Cluster-Defects - Eckhart Fretwurst (II. Institut fuer Experimentalphysik)  
3:00 PM Magnetoresistance in the irradiated Si microstrip type samples - Juozas Vaitkus (Vilnius University)  
3:20 PM --- Coffee Break ---
3:50 PM Defect centers in nitrogen-enriched high-resistivity n-type silicon induced by high-energy protons - Pawel Kaminski (Institute of Electronic Materials Technology (PL))  
4:10 PM Impact of electron irradiation on N- and O-enriched FZ silicon p-in-n pad detectors - Kevin Lauer (CIS Institut fuer Mikrosensorik GmbH (DE))  
4:30 PM Discussion on Defects and Materials - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)  
9:00 AM
LGAD, DD-APD, SiPM, UFSD, HFS (until 2:00 PM)
9:00 AM Characterisation of HFS detectors - Sofia Otero Ugobono (CERN/Universidade de Santiago de Compostela (ES))  
9:20 AM Neutron Induced Radiation Damage of KETEK SiPMs - Matteo Centis Vignali (Hamburg University (DE))  
9:40 AM Measurements on 50um thick LGAD from CNM - Hartmut Sadrozinski (University of California,Santa Cruz (US))  
10:00 AM Radition damage studies in LGAD detectors from recent CNM and FBK runs - Gregor Kramberger (Jozef Stefan Institute (SI))  
10:20 AM Status of CNM technological developments on LGAD and future plans - Maria del Mar Carulla Areste (Instituto de Microelectronica de Barcelona IMB-CNM)  
10:40 AM The new RD50 Logo - Michael Moll (CERN)  
10:45 AM --- Coffee Break ---
11:10 AM Laboratory measurement and progress in Low Gain Avalanche Diodes - Mr Marco Ferrero (Universita e INFN Torino (IT))  
11:30 AM Temperature dependence of the response of Ultra Fast Silicon Detectors - Roberto Mulargia (Universita e INFN Torino (IT))  
11:50 AM Test beam and TCT characterization results of i-LGAD and Strip LGAD sensors - Ivan Vila Alvarez (Universidad de Cantabria (ES))  
12:10 PM Studies of gain and time resolution of 50 µm LGADs before and after irradiation - Joern Lange (IFAE Barcelona)  
12:30 PM Discussion: Detectors with Gain - Detectors for timing - Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (ES))  
1:00 PM --- Lunch Break ---
9:00 AM
Pixel and Strip sensors; LHC experiments (until 1:00 PM)
9:00 AM Study of prototype sensors for the LHCb Upstream Tracker Upgrade - Scott Edward Ely (Syracuse University (US))  
9:20 AM Run II Radiation Damage Effects and Operation of the LHCb Vertex Locator - Agnieszka Oblakowska-Mucha (AGH University of Science and Technology (PL))  
9:40 AM Charge collection and Lorentz angle measurement on ATLAS12 sensors - Eda Yildirim (Johannes-Gutenberg-Universitaet Mainz (DE))  
10:00 AM Long Term Annealing of ATLAS12 Sensors - Ms Leena Diehl (University of Freiburg)  
10:20 AM Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction - Dr Mikko Juntunen (Helsinki Institute of Physics)  
10:40 AM --- Coffee Break ---
11:10 AM Characterization of irradiated thin n-in-planar pixel and active edge sensors - Natascha Savic (Max-Planck-Institut fur Physik (DE))  
11:30 AM Proposal for the organization of an RD50 project aimed at the realization of an Edge-less Device - Maurizio Boscardin (Unknown) Maurizio Boscardin (FBK Trento)  
11:50 AM Common project proposal: Thin-film based silicon sensors - Daniel Muenstermann (Lancaster University (GB))  
12:10 PM The RD50 database on measured data - Donato Creanza (Dipartimento Interateneo di Fisica & INFN - Bari) Donato Creanza (Universita e INFN, Bari (IT))  
12:30 PM Discussion: LHC Experiments; New Technologies; Edgeless  
PM
5:00 PM
Collaboration Board (until 7:00 PM)
2:00 PM
TCT & Device simulations (until 7:00 PM)
2:00 PM Physical limits on the inter-strip resistance for planar strip sensors - Vitaliy Fadeyev (University of California,Santa Cruz (US))  
2:20 PM Calculation of the effective space charge profile of a detector using TRACS - Julio Calvo Pinto (CERN)  
2:40 PM LGAD design for harsh radiation environments using TCAD simulations. - Ashutosh Bhardwaj (University of Delhi (IN))  
3:00 PM Simulation of Low Gain Avalanche Detector characteristics based on the concept of negative feedback in irradiated silicon detectors with carrier impact ionization (Part II) - Dr Elena Verbitskaya (Ioffe Institute)  
3:20 PM Simulation of Dynamic Characteristics of GaN p-i-n Avalanche Diode Type Particle Detector - Juozas Vysniauskas (Vilnius University (LT))  
3:40 PM --- Coffee Break ---
4:10 PM TCAD simulations of p-bulk silicon sensors after a large range of fluences - Marco Bomben (Centre National de la Recherche Scientifique (FR))  
4:30 PM Fitting the LGAD simulation - Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))  
4:50 PM Insight into the behaviour of futuristic low bulk resistivity Si sensors using device simulation.  
5:10 PM Validation strategy for the simulation of highly irradiated silicon pixel sensors - Joern Schwandt (Hamburg University (DE))  
5:30 PM Discussion: Device Simulation & RD50 Simulation Working Group  
7:30 PM --- Social Dinner ---
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