21-23 November 2016
Europe/Zurich timezone

Temperature dependence of the response of Ultra Fast Silicon Detectors

22 Nov 2016, 11:30
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin


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Roberto Mulargia (Universita e INFN Torino (IT))


The Ultra Fast Silicon Detectors (UFSD) are a novel concept of silicon detectors based on the Low Gain Avalanche Diode (LGAD) technology, which are able to obtain time resolution of the order of few tens of picoseconds. First prototypes with different geometries (pads/pixels/strips), thickness ($300$ and $50 \mu m$) and gain (between $5$ and $20$) have been recently designed and manufactured by CNM (Centro Nacional de Microelectrónica, Barcelona) and FBK (Fondazione Bruno Kessler, Trento).

Several measurements on these devices have been performed in laboratory and in beam test and a dependence of the gain on the temperature has been observed. Some of the first measurements will be shown (leakage current, breakdown voltage, gain and time resolution on the $300 \mu m$ from FBK and gain on the $50 \mu m$-thick sensor from CNM) and a comparison with the theoretically predicted trend will be discussed.

Primary author

Roberto Mulargia (Universita e INFN Torino (IT))


Hartmut Sadrozinski (University of California,Santa Cruz (US)) Marco Ferrero (Universita e INFN Torino (IT))

Presentation Materials