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15–17 Feb 2017
Bose Institute, Kolkata, India
Asia/Kolkata timezone

Pitfalls in calculating charge response parameter from etch pit

16 Feb 2017, 16:30
20m
Oral

Speaker

Mr Rupamoy Bhattacharyya (Bose Institute)

Description

An etch pit is formed inside a Nuclear Track Detector (NTD) on chemical etching of a latent track, marking the passage of a charged particle through the detector medium. Generally, there are two well known methods which are being used while determining the charge response parameter. Here the applicability of these two methods and their suitability in different regime of stopping power S(E) is investigated.`

Presentation type Oral

Primary author

Mr Rupamoy Bhattacharyya (Bose Institute)

Presentation materials