12th "Trento" Workshop on Advanced Silicon Radiation Detectors

FBK-INFN-LPNHE thin n-on-p pixel detectors: beamtest results

20 Feb 2017, 17:00

30m

Aula Grande (FBK, Trento)

Oral Session 3: Planar Sensors (2)

Speakers

Audrey Ducourthial (Centre National de la Recherche Scientifique (FR)) Giovanni Calderini (Centre National de la Recherche Scientifique (FR)) Giovanni Marchiori (LPNHE Paris) Luciano Bosisio (Universita e INFN (IT)) Marco Bomben (Centre National de la Recherche Scientifique (FR)) Maurizio Boscardin (FBK Trento) Nicola Zorzi (Fondazione Bruno Kessler - FBK) Louis D'Eramo (Centre National de la Recherche Scientifique (FR)) Alvise Bagolini (FBK) Marco Meschini (Universita e INFN, Firenze (IT)) Alberto Messineo (Universita di Pisa & INFN (IT)) Nanni Darbo (Universita e INFN Genova (IT))Prof. Gian-Franco Dalla Betta (INFN and University of Trento)Dr Gabriele Giacomini (Brookhaven National Laboratory)Mr Alvise Bagolini (FBK) Giovanni Calderini (Centre National de la Recherche Scientifique (FR))

Description

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system.
The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effectiveness.
The paper reports on the performance of 100 $\mu m$ n-in-p planar pixel sensors produced by FBK-CMM. After discussing the sensor technology an overview of CERN 2016 testbeam results of the produced devices will be given, before and after irradiation, including hit and charge collection efficiency and space resolution.
The plans for new thin and edgeless productions at FBK-CMM will be also presented.

Presentation materials

trento_ducourthial.pdf