In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system.
The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effectiveness.
The paper reports on the performance of 100 $\mu m$ n-in-p planar pixel sensors produced by FBK-CMM. After discussing the sensor technology an overview of CERN 2016 testbeam results of the produced devices will be given, before and after irradiation, including hit and charge collection efficiency and space resolution.
The plans for new thin and edgeless productions at FBK-CMM will be also presented.