Speaker
Ivan Vila Alvarez
(Universidad de Cantabria (ES))
Description
We will present here the most recent results from the laser and test-beam based characterization of fully functional s-LGADs (n-in-p strip LGAD) and i-LGAD (p-in-p strip LGAD) sensors. Measured current transient shapes were compared against TCAD simulations for a better understanding of the signal formation process, sensor response uniformity, signal amplification and timing features; tracking performance of a i-LGAD device was assessed at the SPS particle’s beam using off-the-shelf Alibava readout electronics; finally, it will be shown a preliminary study of an assembly consisting of s-LGAD sensors read out with of dedicated analog front-end which implements a charge amplifier-shaper manufactured on the AMS 180nm technology
| TRACK | UFSD, LGAD |
|---|
Primary author
Ivan Vila Alvarez
(Universidad de Cantabria (ES))
Co-authors
Angel Dieguez
(Universitat de Barcelona)
Gervasio Gomez
(Universidad de Cantabria (ES))
Dr
Giulio Pellegrini
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
Javier Gonzalez Sanchez
(Universidad de Cantabria (ES))
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Maria del Mar Carulla Areste
(Instituto de Microelectronica de Barcelona IMB-CNM)
Oscar Alonso Casanovas
Richard Jaramillo Echeverria
(Universidad de Cantabria (ES))
Salvador Hidalgo Villena
(Instituto de Microelectronica de Barcelona (ES))
