12th "Trento" Workshop on Advanced Silicon Radiation Detectors

Session

Session 7: LGAD

LGAD

21 Feb 2017, 13:45

Aula Grande (FBK, Trento)

Conveners

Session 7: LGAD

• Roberta Arcidiacono (Universita e INFN Torino (IT))

27. STUDY AND CHARACTERIZATION OF LOW GAIN AVALANCHE DIODES

Marco Ferrero (Universita e INFN Torino (IT)), Nicolo Cartiglia (Universita e INFN Torino (IT))

21/02/2017, 13:45

Oral

Low Gain Avalanche Diode, a novel concept of silicon sensors, are detectors with intrinsic gain due to a thin gain layer implanted underneath the n electrode. In this contribution we will Illustrate several measurements performed in laboratory to understand the characteristic of the gain layer.

Measurements will be showed (leakage current, breakdown voltage, capacitance and doping profile of...

7. Timing Measurements on Ultra-fast Silicon Detectors

Hartmut Sadrozinski (University of California,Santa Cruz (US))

21/02/2017, 14:05

Oral

I will present measurements of the timing resolution using the UCSC beta source of several thin LGADs (UFSD):
1. irradiated 50um LGAD with 3 different doping concentrations from CNM;
2. pre-rad 50 and 80 LGAD with 4 different doping concentrations from HPK

70. Properties of LGAD sensors

Nicolo Cartiglia (Universita e INFN Torino (IT))

21/02/2017, 14:25

Oral

In this presentation I will review the results on the gain behaviour of LGAD sensors as a function of several key parameters such as Vbias, Temperature, doping of the gain layer, and irradiation dose.
This review will include results from LGAD manufactured by different foundries using different productions techniques and production parameters.

The experimental results are compared to...

43. Last measurements and developments on LGAD detectors

Maria del Mar Carulla Areste (Instituto de Microelectronica de Barcelona IMB-CNM)

21/02/2017, 14:45

Oral

Last measurements of LGAD devices on 50 µm and 70 µm epitaxial wafers will be presented, as well as the effect of neutron irradiation on Gallium diodes.

25. Progress report on the characterization of LGAD microstrip sensors (n-in-p and p-in-p) and their readout tests using a dedicated high dynamic-range Charge-Sensitive Amplifier-Shaper front-end developed on the AMS 180nm technology.

Ivan Vila Alvarez (Universidad de Cantabria (ES))

21/02/2017, 15:05

Oral

We will present here the most recent results from the laser and test-beam based characterization of fully functional s-LGADs (n-in-p strip LGAD) and i-LGAD (p-in-p strip LGAD) sensors. Measured current transient shapes were compared against TCAD simulations for a better understanding of the signal formation process, sensor response uniformity, signal amplification and timing features; tracking...

41. Gain and time resolution of 50 um thin LGAD before and after irradiation

Joern Lange (IFAE Barcelona)

21/02/2017, 15:25

Oral

Silicon Low-Gain Avalanche Detectors (LGAD) are a promising technology for high energy physics experiments where high precision segmented timing sensors are required. This can be used for example in the ATLAS High Granularity Timing Detector (HGTD) or forward experiments like the ATLAS Forward Proton (AFP) and CMS-TOTEM Precision Proton Spectrometer (CT-PPS) for pileup removal. LGAD from a...

52. New Developments of Ultra Fast Silicon Detectors at FBK

Dr Giovanni Paternoster (FBK)

21/02/2017, 15:45

Oral

UFSD are silicon sensors based on the Low-Gain Avalanche Diodes (LGAD) design and, due to internal gain, exhibit a signal which is a factor of ~ 10 larger than standard silicon detectors.
In this contribution we report on the design, fabrication and performances of the first fully double-sided production of segmented UFSD. The production was carried out at the FBK facility in Trento (Italy),...