Conveners
Session 7: LGAD
- Roberta Arcidiacono (Universita e INFN Torino (IT))
Low Gain Avalanche Diode, a novel concept of silicon sensors, are detectors with intrinsic gain due to a thin gain layer implanted underneath the n electrode. In this contribution we will Illustrate several measurements performed in laboratory to understand the characteristic of the gain layer.
Measurements will be showed (leakage current, breakdown voltage, capacitance and doping profile of...
I will present measurements of the timing resolution using the UCSC beta source of several thin LGADs (UFSD):
1. irradiated 50um LGAD with 3 different doping concentrations from CNM;
2. pre-rad 50 and 80 LGAD with 4 different doping concentrations from HPK
In this presentation I will review the results on the gain behaviour of LGAD sensors as a function of several key parameters such as Vbias, Temperature, doping of the gain layer, and irradiation dose.
This review will include results from LGAD manufactured by different foundries using different productions techniques and production parameters.
The experimental results are compared to...
Last measurements of LGAD devices on 50 µm and 70 µm epitaxial wafers will be presented, as well as the effect of neutron irradiation on Gallium diodes.
We will present here the most recent results from the laser and test-beam based characterization of fully functional s-LGADs (n-in-p strip LGAD) and i-LGAD (p-in-p strip LGAD) sensors. Measured current transient shapes were compared against TCAD simulations for a better understanding of the signal formation process, sensor response uniformity, signal amplification and timing features; tracking...
Silicon Low-Gain Avalanche Detectors (LGAD) are a promising technology for high energy physics experiments where high precision segmented timing sensors are required. This can be used for example in the ATLAS High Granularity Timing Detector (HGTD) or forward experiments like the ATLAS Forward Proton (AFP) and CMS-TOTEM Precision Proton Spectrometer (CT-PPS) for pileup removal. LGAD from a...
UFSD are silicon sensors based on the Low-Gain Avalanche Diodes (LGAD) design and, due to internal gain, exhibit a signal which is a factor of ~ 10 larger than standard silicon detectors.
In this contribution we report on the design, fabrication and performances of the first fully double-sided production of segmented UFSD. The production was carried out at the FBK facility in Trento (Italy),...
