Feb 20 – 22, 2017
FBK, Trento
Europe/Zurich timezone

Progress report on the characterization of LGAD microstrip sensors (n-in-p and p-in-p) and their readout tests using a dedicated high dynamic-range Charge-Sensitive Amplifier-Shaper front-end developed on the AMS 180nm technology.

Feb 21, 2017, 3:05 PM
Aula Grande (FBK, Trento)

Aula Grande

FBK, Trento

Via Santa Croce, 77 38122 Trento ITALY


Ivan Vila Alvarez (Universidad de Cantabria (ES))


We will present here the most recent results from the laser and test-beam based characterization of fully functional s-LGADs (n-in-p strip LGAD) and i-LGAD (p-in-p strip LGAD) sensors. Measured current transient shapes were compared against TCAD simulations for a better understanding of the signal formation process, sensor response uniformity, signal amplification and timing features; tracking performance of a i-LGAD device was assessed at the SPS particle’s beam using off-the-shelf Alibava readout electronics; finally, it will be shown a preliminary study of an assembly consisting of s-LGAD sensors read out with of dedicated analog front-end which implements a charge amplifier-shaper manufactured on the AMS 180nm technology


Primary author

Ivan Vila Alvarez (Universidad de Cantabria (ES))


Angel Dieguez (Universitat de Barcelona) Gervasio Gomez (Universidad de Cantabria (ES)) Dr Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)) Javier Gonzalez Sanchez (Universidad de Cantabria (ES)) Marcos Fernandez Garcia (Universidad de Cantabria (ES)) Maria del Mar Carulla Areste (Instituto de Microelectronica de Barcelona IMB-CNM) Oscar Alonso Casanovas Richard Jaramillo Echeverria (Universidad de Cantabria (ES)) Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (ES))

Presentation materials