Feb 20 – 22, 2017
FBK, Trento
Europe/Zurich timezone

STUDY AND CHARACTERIZATION OF LOW GAIN AVALANCHE DIODES

Feb 21, 2017, 1:45 PM
20m
Aula Grande (FBK, Trento)

Aula Grande

FBK, Trento

Via Santa Croce, 77 38122 Trento ITALY

Speakers

Marco Ferrero (Universita e INFN Torino (IT)) Nicolo Cartiglia (Universita e INFN Torino (IT))

Description

Low Gain Avalanche Diode, a novel concept of silicon sensors, are detectors with intrinsic gain due to a thin gain layer implanted underneath the n electrode. In this contribution we will Illustrate several measurements performed in laboratory to understand the characteristic of the gain layer.

Measurements will be showed (leakage current, breakdown voltage, capacitance and doping profile of the gain layer) and a comparison between gain layers with different dose implant will be discussed.

We will also present group of measurements on the same LGAD pad type, to verify reproducibility.

TRACK UFSD, LGAD

Primary authors

Marco Ferrero (Universita e INFN Torino (IT)) Nicolo Cartiglia (Universita e INFN Torino (IT))

Presentation materials