Speakers
Marco Ferrero
(Universita e INFN Torino (IT))
Nicolo Cartiglia
(Universita e INFN Torino (IT))
Description
Low Gain Avalanche Diode, a novel concept of silicon sensors, are detectors with intrinsic gain due to a thin gain layer implanted underneath the n electrode. In this contribution we will Illustrate several measurements performed in laboratory to understand the characteristic of the gain layer.
Measurements will be showed (leakage current, breakdown voltage, capacitance and doping profile of the gain layer) and a comparison between gain layers with different dose implant will be discussed.
We will also present group of measurements on the same LGAD pad type, to verify reproducibility.
| TRACK | UFSD, LGAD |
|---|
Primary authors
Marco Ferrero
(Universita e INFN Torino (IT))
Nicolo Cartiglia
(Universita e INFN Torino (IT))
