Speaker
Gervasio Gomez
(Universidad de Cantabria (ES))
Description
Silicon pixels of area 25x100 and 50x50 square microns, fabricated at CNM using double sided 3D technology on 230 um thick wafers, are characterized using a Sr90 radioactive source and in a pion/proton test beam at the CERN SPS. Results are shown both for non-irradiated sensors and for sensors irradiated with protons at the CERN PS.
| TRACK | 3D Sensors |
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Primary author
Gervasio Gomez
(Universidad de Cantabria (ES))
