The 26th International Workshop on Vertex Detectors

Session

Radiation Hardness

Sep 14, 2017, 11:15 AM

57. Review of RD42 activities

Harris Kagan (Ohio State University), Marko Mikuz (Jozef Stefan Institute (SI))

9/14/17, 11:15 AM

Invited Talk

58. Review of RD50 activities

Marcos Fernandez Garcia (Universidad de Cantabria (ES))

9/14/17, 11:50 AM

Invited Talk

59. Main Results of Radiation Characterization of CMOS 65nm technology and the impact on the design of RD53A, a large scale pixel chip prototype for HL_LHC.

Mohsine Menouni (Centre National de la Recherche Scientifique (FR))

9/14/17, 12:25 PM

Invited Talk

The results of several years of radiation characterization of the CMOS 65nm technology at both transistor level and circuit level will be summarized here.The degradation of the performance of 65 nm MOSFETs upon radiation exposure was studied using 10-keV X-rays, but also using 3-MeV protons. Models that parameterize the effect of total dose on MOS performance have been defined according to the...

45. Extreme Radiation Tolerant Sensor Technologies

Marko Mikuz (Jozef Stefan Institute (SI))

9/14/17, 2:30 PM

Invited Talk

22. Multiplication onset and electric field properties of proton irradiated LGADs

Sofia Otero Ugobono (CERN/Universidade de Santiago de Compostela (ES))

9/14/17, 3:05 PM

Invited Talk

In view of the LHC luminosity upgrade (HL-LHC), new radiation tolerant silicon sensors are being developed. Such sensors will have to cope with radiation levels of up to about $10^{16}\text{ fast hadrons}/\text{cm}^2$. Under these conditions, the degradation of the charge collection efficiency remains the main obstacle in detector operation. Furthermore, as new functionalities are given to...

61. Modeling radiation damage in TCAD

Daniele Passeri (University & INFN, Perugia (IT))

9/14/17, 3:40 PM

Invited Talk

60. Radiation tolerance of depleted CMOS

Mathieu Benoit (UNIGE)

Invited Talk