Speaker
Description
Fundamental data are indispensable to set up a numerical simulation model to predict the amount of current extracted from an ion source. Surface recombination process plays a decisive role for determining the proton ratio in hydrogen plasma ion species, and the data on recombination coefficients have been accumulated for elements used for ion source wall materials [1]. The surface conditions of ion sources, however, are usually far from ideal ones composed of pure metals with hydrogen in ultra-high vacuum environment in which most of the plasma-surface interaction data are collected. For example, a plasma grid of a negative hydrogen (H
This study aims at finding the plasma-surface interaction process influential on H
Addition of foreign materials into the source will alter plasma-surface interaction in the vicinity of the plasma grid. Oxygen or water injection into the test ion source should form oxides on the surface of the plasma grid and may decrease H
References
[1] B. J. Wood, H. Wise, J. Phys. Chem. 65, 1976(1961).
[2] C. A. Papageorgopoulos and J. M. Chen, Surf. Sci. 39, 283 (1973).