15-20 October 2017
Europe/Zurich timezone

A Pulsed Vacuum Arc Ion Source with a Pure Boron Cathode

18 Oct 2017, 16:30
2h 30m


Centre international de Conférence Genève (CICG). http://www.cicg.ch/
Poster presentation Applications and related technologies Poster Session 3


Efim Oks (Tomsk State University of Control Systems and Radioelectronics)


The report presents experimental research results on a pulsed vacuum arc ion source with heated elemental boron cathode. Boron is a semiconductor having a high specific resistance (~1.8 MOhm×cm) under normal conditions and is difficult to sputter and to evaporate. Therefore in the known ion sources, the initiation of an arc discharge with a pure boron cathode requires preliminary heating-up of the cathode to temperatures up to 1000 °C. We have designed a high-temperature cathodic unit which enabled to operate a cathodic arc from pure boron material and used a special technique for the arc triggering and one allowed to decrease the cathode temperature up to 600 °C. The arc discharge was operated at 100 A with pulse duration from 100 µs to 300 µs. Boron ions were produced almost entirely in a singly and doubly ionized state with a ratio close to 1:1.

Work supported by a The Russian Science Foundation (grant number of 16-19-10034)

Primary authors

Dr Alexey Bugaev (Institute of High Current Electronics) Dr Vasily Gushenets (Institute of High Current Electronics)

Presentation materials