Graphene Oxide is an insulator consisting of oxygenated functional groups, so that, for restoring its electrical conductivity, chemical or heat treatments can be employed. Presently, a selective deoxygenation of graphene oxide has been conducted for design and fabrication of graphene based devices. The Ion beam lithography is considered a powerful route for patterning onto graphene oxide foil. A stream of Helium ions were used for both direct patterning onto a graphene oxide foil and online characterization of its structural and compositional properties. Helium ions with energy of 1.2 MeV and controllable fluencies have been used to induce insulator-metal transition in the GO foil. The Scanning Electron Microscopy, Energy Dispersive Spectroscopy, Rutherford Backscattering Spectrometry and Elastic Recoils Detection analyses have been accurately employed to reveal and to monitor the deoxygenation of the Graphene oxide foil demonstrating the reliability of direct patterning using ion beam lithography technique.
The research has been realised at the CANAM (Center of Accelerators and Nuclear Analytical Methods) infrastructure LM 2015056 and has been supported by project GACR No. 16-05167S) and by specific university research (MSMT No 20-SVV/2017).