15-20 October 2017
Europe/Zurich timezone

Extraction of an Aluminum-Nitride Ion Beam from a Planar Magnetron Sputter Type Ion Source

18 Oct 2017, 16:30
2h 30m


Centre international de Conférence Genève (CICG). http://www.cicg.ch/
Poster presentation Beam extraction, transport, and diagnostics Poster Session 3


Kentaro Yoshioka (Doshisha University)


Ion beam based processes to prepare semiconductor components open possibilities to further down size electronic appliances in future. Aluminum-nitride (AlN) has potential applications in many fields of electronics such as ultra-violet light-emitting diodes and highly thermal conductivity dielectric materials. Direct implantation of AlN molecular ions into base materials may realize a new semiconductor fabrication process, and the possibility of realizing a pencil beam of AlN molecular ions has been started investigated.

A capacitively coupled 13.56 MHz RF magnetron sputter type ion source produces a beam of AlN$^+$. The source contains an aluminum target immersed in nitrogen containing plasma. Introduction of Ar gas into N$_2$ discharge plasma enhanced target sputtering, and beam current characteristics against the gas ratio of Ar to N$_2$ were measured for fixed gas pressure and RF power. The result showed beam current ratio of AlN$^+$ to Ar$^+$ increased with the increasing amount of Ar gas injected into N$_2$ plasma. The observed maximum ratio of AlN$^+$ to Ar$^+$ reached to about 1.5%, while the ratio of Al$^+$ to Ar$^+$ was about 24% at the corresponding discharge condition. The operating condition of the source was affected by formation of AlN layer, and the time dependent behavior of the AlN$^+$ beam is discussed in relation to the formation of AlN layer on the ion source wall.

Primary author

Kentaro Yoshioka (Doshisha University)


Takahiro Kenmotsu (Doshisha University) Motoi Wada (Doshisha University)

Presentation materials