VIBA (Versatile Ion Beam Accelerator) is a compact linear accelerator facility using 28 GHz ECR ion source at KBSI (Korea Basic Science Institute). The goal of VIBA is to support various researchers using low-energy ion beams. During the year, diagnosis system of VIBA was changed for ion implantation. Ion implantation chamber was separated from the conventional diagnostic chamber for improving ion implantation. We performed ion implantation on silicon wafers with several ions and energies, and measured the depth profile of each sample using a surface analysis instrument. Experimental results were compared with simulations performed using SRIM 2013 code. Characteristics of ion implantation using ECRIS will be reported.