Speaker
Dr
E.Giulio Villani
(STFC Ruthrerford Appleton Laboratory)
Description
I will present results of Synopsys TCAD simulations of OVERMOS, a MAPS CMOS detector based on high resistivity substrate. Following a short description of the main features of OVERMOS, I will describe experimental results of initial test structures and comparisons with TCAD simulation results, both for standard and neutron irradiated devices. I will then describe a proposed fabrication of test structures Schottky diodes to investigate radiation effects on silicon substrates of doping levels in the range 1e13 – 1e17 cm-3, as typically found in CMOS technology.
Authors
Dr
E.Giulio Villani
(STFC Ruthrerford Appleton Laboratory)
Dr
Fergus Wilson
Dr
Zhige Zhang
Dr
Jens Dopke
Dr
Iain Sedgwick
Dr
Marcus French
Dr
Paul Seller
Stephen McMahon
Dr
Steve Worm
Dr
Qing Lei Xiu
Dr
Zhijun Liang
