Speaker
Gregor Kramberger
(Jozef Stefan Institute (SI))
Description
LGADs have been produced by CNM where Ga replaced B as a dopant in the multiplication layer in order to increase radiation hardness of LGADs. Although the devices exhibited early breakdown before irradiations they were fully functional after neutron irradiation. TCT and charge collection measurements with 90Sr were performed on devices irradiated up to the equivalent fluences of 6e15 cm-2. Initial studies indicate that Ga doped devices can be more radiation hard that the B doped ones.
Authors
Gregor Kramberger
(Jozef Stefan Institute (SI))
Dr
Giulio Pellegrini
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
Salvador Hidalgo Villena
(Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
Maria del Mar Carulla Areste
(Instituto de Microelectronica de Barcelona IMB-CNM)
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
Igor Mandic
(Jozef Stefan Institute (SI))
Vladimir Cindro
(Jozef Stefan Institute (SI))
Marko Mikuz
(Jozef Stefan Institute (SI))
Martin Petek
(Jozef Stefan Institute)
